IXBH15N160 Selling Leads, Price trend, IXBH15N160 DataSheet download, circuit diagram from SeekIC.com

Features: • International standard package JEDEC TO-247 AD• High Voltage BIMOSFETTM- replaces high voltage Darlingtons and series connected MOSFETs- lower effective RDS(on)• Monolithic construction- high blocking voltage capability- very fast turn-off characteristics• MOS G...

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SeekIC No. : 004381495 Detail

IXBH15N160: Features: • International standard package JEDEC TO-247 AD• High Voltage BIMOSFETTM- replaces high voltage Darlingtons and series connected MOSFETs- lower effective RDS(on)• Monoli...

IXBH15N160 Data Sheet

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Part Number:: IXBH15N160
Supply Ability:: 5000

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Upload time: 2024/12/23

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Product Details

Description

Features:

• International standard package JEDEC TO-247 AD
• High Voltage BIMOSFET^TM
- replaces high voltage Darlingtons and series connected MOSFETs
- lower effective RDS(on)
• Monolithic construction
- high blocking voltage capability
- very fast turn-off characteristics
• MOS Gate turn-on
- drive simplicity
• Reverse conducting capability

Application

• Flyback converters
• DC choppers
• Uninterruptible power supplies (UPS)
• Switched-mode and resonant-mode power supplies
• CRT deflection
• Lamp ballasts

Specifications

Symbol	Conditions	Maximum		Ratings
		15N140	15N160
V_CES	T_J = 25 to 150	1400	1600	v
V_CGR	T_J= 25 to 150; RGE = 1	1400	1600	v
V_GES	Continuous	±20		V
		±30		V
I_C25	T_C= 25,	15		A
I_C90	T_C = 90	9		A
I_CM	T_C = 25°C, 1 ms	18		A
SSOA (RBSOA)	V_GE= 15 V, T_VJ= 125, R_G = 47 V_CE = 0.8•V_CES Clamped inductive load, L = 100 H	I = 18		A
P_C	T_C = 25	150		W
T_J		-55 ... +150
T_JM		150
T_stg		-55 ... +150
T_L	1.6 mm (0.063 in) from case for 10 s	300
M_d	Mounting torque	1.15/10		Nm/lb.in.
Weight		6		g

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IXBH15N160

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