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VGE = 15/0 V; RG = 22 ; TVJ = 125 RBSOA, Clamped inductive load; L = 100 H
40
A
VCEK
0.8VCES
Ptot
TC = 25
250
W
IXBF40N140 Features
• High Voltage BIMOSFETTM - substitute for high voltage MOSFETs with significantly lower voltage drop - fast switching for high frequency operation - reverse conduction capability • ISOPLUS i4-PACTM high voltage package - isolated back surface - enlarged creepage towards heatsink - enlarged creepage between high voltage pins - application friendly pinout - high reliability - industry standard outline
IXBF40N140 Typical Application
• switched mode power supplies • DC-DC converters • resonant converters • lamp ballasts • laser generators, x ray generators
IXBF40N160 Parameters
Technical/Catalog Information
IXBF40N160
Vendor
IXYS
Category
Discrete Semiconductor Products
Input Type
Standard
Voltage - Collector Emitter Breakdown (Max)
1600V
Current - Collector (Ic) (Max)
28A
Vce(on) (Max) @ Vge, Ic
7.1V @ 15V, 20A
Power - Max
250W
Mounting Type
Through Hole
Package / Case
ISOPLUS i4-PAC?
Packaging
*
Lead Free Status
Lead Free
RoHS Status
RoHS Compliant
Other Names
IXBF40N160 IXBF40N160
IXBF40N160 Maximum Ratings
Symbol
Conditions
Maximum Ratings
VCES
TVJ = 25 to 150 IXBF 40N140 IXBF 40N160
1400 1600
V V
VGES
±20
V
IC25 IC90
TC = 25 TC= 90
28 16
A A
ICM
VGE = 15/0 V; RG = 22 ; TVJ = 125 RBSOA, Clamped inductive load; L = 100 H
40
A
VCEK
0.8VCES
Ptot
TC = 25
250
W
IXBF40N160 Features
• High Voltage BIMOSFETTM - substitute for high voltage MOSFETs with significantly lower voltage drop - fast switching for high frequency operation - reverse conduction capability • ISOPLUS i4-PACTM high voltage package - isolated back surface - enlarged creepage towards heatsink - enlarged creepage between high voltage pins - application friendly pinout - high reliability - industry standard outline
IXBF40N160 Typical Application
• switched mode power supplies • DC-DC converters • resonant converters • lamp ballasts • laser generators, x ray generators