Features: • High Voltage BIMOSFETTM - substitute for high voltage MOSFETs with significantly lower voltage drop - fast switching for high frequency operation- reverse conduction capability• ISOPLUS i4-PACTM high voltage package - isolated back surface - enlarged creepage towards heatsi...
IXBF9N160: Features: • High Voltage BIMOSFETTM - substitute for high voltage MOSFETs with significantly lower voltage drop - fast switching for high frequency operation- reverse conduction capabilityR...
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Symbol | Conditions | Maximum | Ratings | |
VCES | TVJ = 25°C to 150°C | IXBF 9N140 | 1400 | V |
IXBF 9N160 | 1600 | V | ||
VGES | ±20 | V | ||
IC25 | TC = 25°C | 7 | A | |
IC90 | TC = 90°C | 4 | A | |
ICM | VGE = 15/0 V; RG = 100; TVJ = 125°C | 12 | A | |
VCEK | RBSOA, Clamped inductive load; L = 100 µH | 0.8VCES | A | |
Ptot | TC = 25°C | 70 | W |