IHW20N120R2, IHW20T120, IHW25N120 Selling Leads, Datasheet
MFG:INFINEON Package Cooled:TO-247 D/C:TO-247
IHW20N120R2, IHW20T120, IHW25N120 Datasheet download
Part Number: IHW20N120R2
MFG: INFINEON
Package Cooled: TO-247
D/C: TO-247
IHW20N120R2, IHW20T120, IHW25N120
- Table of contents:
Info of IHW20N120R2
Info of IHW20T120
Info of IHW25N120
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About IHW15N120R2
PDF/DataSheet Download
Datasheet: IHW15N120R2
File Size: 373928 KB
Manufacturer:
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About IHW20T120
PDF/DataSheet Download
Datasheet: IHW20T120
File Size: 328391 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
About IHW15N120R2
PDF/DataSheet Download
Datasheet: IHW15N120R2
File Size: 373928 KB
Manufacturer:
Download : Click here to Download
IHW20N120R2 Maximum Ratings
|
Parameter |
Symbol |
Value |
Unit |
| Collector-emitter voltage | VCE | 1200 | V |
| DC collector current TC = 25°C TC = 100°C |
IC | 40 20 |
A |
| Pulsed collector current, tp limited by Tjmax | ICpuls | 60 | |
| Turn off safe operating area (VCE 1200V, Tj 175°C) | - | 60 | |
| Diode forward current TC = 25°C TC = 100°C |
IF | 40 20 | |
| Diode pulsed current, tp limited by Tjmax | IFpuls | 30 | |
| Diode surge non repetitive current, tp limited by Tjmax TC = 25°C, tp = 10ms, sine halfwave TC = 25°C, tp 2.5s, sine halfwave TC = 100°C, tp 2.5s, sine halfwave |
IFSM | 50 130 120 | |
| Gate-emitter voltage Transient Gate-emitter voltage (tp < 5 ms) |
VGE | ±20 ±25 |
V |
| Power dissipation TC = 25°C | Ptot | 330 | W |
| Operating junction temperature | Tj | -40...+175 | °C |
| Storage temperature | Tstg | -55...+175 | |
| Soldering temperature, 1.6mm (0.063 in.) from case for 10s | - | 260 |
IHW20N120R2 Features
• Powerful monolithic Body Diode with very low forward voltage
• Body diode clamps negative voltages
• TrenchStop and Fieldstop technology for 1200 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
• NPT technology offers easy parallel switching capability due to positive temperature coefficient in VCE(sat)
• Low EMI
• Qualified according to JEDEC1 for target applications
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
• Body diode clamps negative voltages
• TrenchStop and Fieldstop technology for 1200 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
• NPT technology offers easy parallel switching capability due to positive temperature coefficient in VCE(sat)
• Low EMI
• Qualified according to JEDEC1 for target applications
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
IHW20N120R2 Typical Application
• Inductive Cooking
• Soft Switching Applications
• Soft Switching Applications
IHW20T120 Maximum Ratings
| Parameter | Symbol | Value | Unit |
| Collector-emitter voltage | VCE | 1200 | V |
| Triangular collector peak current (VGS = 15V) TC = 100°C, f = 32kHz |
IC | 40 20 |
A |
| Pulsed collector current, tp limited by Tjmax | ICpuls | 60 | |
| Turn off safe operating area VCE 1200V, Tj 150°C |
- | 60 | |
| Diode forward current TC = 25°C TC = 100°C |
IF | 23 13 | |
| Diode pulsed current, tp limited by Tjmax, Tc = 25°C | IFpuls | 36 | |
| Diode surge non repetitive current, tp limited by Tjmax TC = 25°C, tp = 10ms, sine halfwave TC = 25°C, tp 2.5µs, sine halfwave TC = 100°C, tp 2.5µs, sine halfwave |
IFSM | 50 130 120 |
A |
| Gate-emitter voltage | VGE | ±20 | V |
| Short circuit withstand time1) VGE = 15V, VCC 1200V, Tj 150°C |
tSC | 10 | µs |
| Power dissipation TC = 25°C |
Ptot | 178 | W |
| Operating | Tj | -40...+150 | °C |
| Storage temperature | Tstg | -55...+150 | |
| Soldering temperature 1.6mm(0.063 in.) from case for 10s |
- | 260 | °C |
IHW20T120 Connection Diagram
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