IHW20T120

Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Collector-Emitter Saturation Voltage : 2.2 V
Package / Case : TO-247-3
Collector- Emitter Voltage VCEO Max : 1.2 KV


Pinout




Specifications

Parameter	Symbol	Value	Unit
Collector-emitter voltage	VCE	1200	V
Triangular collector peak current (VGS = 15V) TC = 100°C, f = 32kHz	IC	40 20	A
Pulsed collector current, tp limited by Tjmax	ICpuls	60
Turn off safe operating area VCE 1200V, Tj 150°C	-	60
Diode forward current TC = 25°C TC = 100°C	IF	23 13
Diode pulsed current, tp limited by Tjmax, Tc = 25°C	IFpuls	36
Diode surge non repetitive current, tp limited by Tjmax TC = 25°C, tp = 10ms, sine halfwave TC = 25°C, tp 2.5µs, sine halfwave TC = 100°C, tp 2.5µs, sine halfwave	IFSM	50 130 120	A
Gate-emitter voltage	VGE	±20	V
Short circuit withstand time1) VGE = 15V, VCC 1200V, Tj 150°C	tSC	10	µs
Power dissipation TC = 25°C	Ptot	178	W
Operating	Tj	-40...+150	°C
Storage temperature	Tstg	-55...+150
Soldering temperature 1.6mm(0.063 in.) from case for 10s	-	260	°C