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IHW20N120R

IGBT Transistors REVERSE CONDUCT IGBT 1200V 20A

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SeekIC No. : 00143791 Detail

IHW20N120R: IGBT Transistors REVERSE CONDUCT IGBT 1200V 20A

IHW20N120R Data Sheet

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Part Number:
IHW20N120R
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 1200 V
Maximum Gate Emitter Voltage : +/- 20 V Maximum Operating Temperature : + 150 C
Package / Case : TO-247-3 Packaging : Tube    

Description

Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Collector- Emitter Voltage VCEO Max : 1200 V
Package / Case : TO-247-3


Features:

•  Powerful monolithic Body Diode with very low forward voltage
•  Body diode clamps negative voltages
•  Trench and Fieldstop technology for 1200 V applications offers :
    - very tight parameter distribution
    - high ruggedness, temperature stable behavior
•  NPT technology offers easy parallel switching capability due to positive temperature coefficient in VCE(sat)
• Low EMI
•  Qualified according to JEDEC1 for target applications
•  Pb-free lead plating; RoHS compliant 
•  Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/



Application

• Inductive Cooking
• Soft Switching Applications 
 


Specifications

Parameter
Symbol
Value
Unit
Collector-emitter voltage
VCE
1200
V
DC collector current, limited by Tjmax
TC = 25
TC = 100
IC
40
20
A
Pulsed collector current, tp limited by Tjmax
ICpul s
60
Turn off safe operating area (VCE 1200V, Tj 175)
-
60
Diode forward current
TC = 25
TC = 100
IF
20
13
Diode pulsed current, tp limited by Tjmax
IFpuls
30
iode surge non repetitive current, tp limited by Tjmax
TC = 25,tp= 10ms, sine lfwave
TC = 25, tp 2.5µs, sine halfwave
TC = 100, tp 2.5µs, sine halfwave
IFSM
50
130
120
Gate-emitter voltage
Transient Gate-emitter voltage (tp < 5 ms)
VGE
±20
±25
V
Power dissipation TC = 25
Ptot
357
W
Operating junction temperature
Tj
-40...+175
Storage temperature
Tstg
-55...+175
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
-
260



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