IHW20N120R2

Gate-Emitter Leakage Current :
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Continuous Collector Current at 25 C : 20 A
Power Dissipation : 330 W
Package / Case : TO-247-3
Collector- Emitter Voltage VCEO Max : 1.2 KV
Collector-Emitter Saturation Voltage : 1.85 V


Features:

• Powerful monolithic Body Diode with very low forward voltage
• Body diode clamps negative voltages
• TrenchStop and Fieldstop technology for 1200 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
• NPT technology offers easy parallel switching capability due to positive temperature coefficient in VCE(sat)
• Low EMI
• Qualified according to JEDEC¹ for target applications
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/


Application

• Inductive Cooking
• Soft Switching Applications


Specifications

Parameter	Symbol	Value	Unit
Collector-emitter voltage	VCE	1200	V
DC collector current TC = 25°C TC = 100°C	IC	40 20	A
Pulsed collector current, tp limited by Tjmax	ICpuls	60
Turn off safe operating area (VCE 1200V, Tj 175°C)	-	60
Diode forward current TC = 25°C TC = 100°C	IF	40 20
Diode pulsed current, tp limited by Tjmax	IFpuls	30
Diode surge non repetitive current, tp limited by Tjmax TC = 25°C, tp = 10ms, sine halfwave TC = 25°C, tp 2.5s, sine halfwave TC = 100°C, tp 2.5s, sine halfwave	IFSM	50 130 120
Gate-emitter voltage Transient Gate-emitter voltage (tp < 5 ms)	VGE	±20 ±25	V
Power dissipation TC = 25°C	Ptot	330	W
Operating junction temperature	Tj	-40...+175	°C
Storage temperature	Tstg	-55...+175
Soldering temperature, 1.6mm (0.063 in.) from case for 10s	-	260