IGBT Transistors IH SeriesRev Conduct IGBT Monolithic Body
IHW20N120R3: IGBT Transistors IH SeriesRev Conduct IGBT Monolithic Body
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Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 1200 V | ||
Collector-Emitter Saturation Voltage : | 1.48 V | Maximum Gate Emitter Voltage : | 6.4 V | ||
Continuous Collector Current at 25 C : | 40 A | Gate-Emitter Leakage Current : | 100 nA | ||
Power Dissipation : | 310 W | Maximum Operating Temperature : | + 175 C | ||
Package / Case : | TO247-3 | Packaging : | Tube |