IHW30N100R

Gate-Emitter Leakage Current :
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Continuous Collector Current at 25 C : 30 A
Package / Case : TO-247-3
Collector- Emitter Voltage VCEO Max : 1 KV
Power Dissipation : 412 W
Collector-Emitter Saturation Voltage : 1.75 V


Features:

• 1.5V Forward voltage of monolithic body Diode
• Full Current Rating of monolithic body Diode
• Specified for T_Jmax = 175
• Trench and Fieldstop technology for 1000 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- easy parallel switching capability due to positive temperature coefficient in V_CE(sat)
• Low EMI
• Qualified according to JEDEC1 for target applications
• Pb-free lead plating; RoHS compliant


Application

• Microwave Oven
• Soft Switching Applications


Specifications

Parameter	Symbol	Value	Unit
Collector-emitter voltage	VCE	1000	V
DC collector current, limited by Tjmax TC = 25 TC = 100	IC	60 30	A
Pulsed collector current, tp limited by Tjmax	ICpuls	90
Turn off safe operating area VCE 600V, Tj 175	-	90
Diode forward current TC = 25 TC = 100	IF	60 30
Diode pulsed current, tp limited by Tjmax	IFpuls	90
Gate-emitter voltage Transient Gate-emitter voltage (tp < 5 ms)	VGE	±20 ±25	V
Power dissipation, TC = 25	Ptot	412	W
Operating junction temperature	Tj	-40...+175
Storage temperature	Tstg	-55...+175
Soldering temperature, 1.6mm (0.063 in.) from case for 10s	-	260