Position: Home  > All Categories> Integrated Circuits (ICs) > IHW30N120R

IHW30N120R

IGBT Transistors REVERSE CONDUCT IGBT 1200V 30A

product image

IHW30N120R Picture
See larger image
SeekIC No. : 00143905 Detail

IHW30N120R: IGBT Transistors REVERSE CONDUCT IGBT 1200V 30A

IHW30N120R Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
IHW30N120R
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/7/15

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 1200 V
Maximum Gate Emitter Voltage : +/- 20 V Maximum Operating Temperature : + 150 C
Package / Case : TO-247-3 Packaging : Tube    

Description

Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Collector- Emitter Voltage VCEO Max : 1200 V
Package / Case : TO-247-3


Features:

• Powerful monolithic Body Diode
• Specified for TJmax = 175
• Trench and Fieldstop technology for 1200 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
• NPT technology offers easy parallel switching capability due to positive temperature coefficient in VCE(sat)
• Low EMI
• Qualified according to JEDEC1 for target applications
• Pb-free lead plating; RoHS compliant

• Powerful monolithic Body Diode
• Specified for TJmax = 175
• Trench and Fieldstop technology for 1200 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
• NPT technology offers easy parallel switching capability due to positive temperature coefficient in VCE(sat)
• Low EMI
• Qualified according to JEDEC1 for target applications
• Pb-free lead plating; RoHS compliant






Application

• Inductive Cooking
• Soft Switching Applications

• Inductive Cooking
• Soft Switching Applications




Specifications

Parameter
Symbol
Value
Unit
Collector-emitter voltage
VCE
1200
V
DC collector current
TC = 25
TC = 100
IC
60
30
A
Pulsed collector current, tp limited by Tjmax
ICpuls
90
Turn off safe operating area (VCE 1200V, Tj 175)
90
Diode forward current
TC = 25
TC = 100
IF
50
25
Diode pulsed current, tp limited by Tjmax
IFpuls
75
Diode surge non repetitive current, tp limited by Tjmax
TC = 25, tp = 10ms, sine halfwave
TC = 25, tp 2.5µs, sine halfwave
TC = 100, tp 2.5µs, sine halfwave
IFSM
50
130
120
Gate-emitter voltage
Transient Gate-emitter voltage (tp < 5 ms)
VGE
±20
±25
V
Power dissipation TC = 25
Ptot
395
W
Operating junction temperature
Tj
-40...+175
Storage temperature
Tstg
-55...+175
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
260





Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Soldering, Desoldering, Rework Products
TGK-900M-B
TGK-900M-1.6D
Motors, Solenoids, Driver Boards/Modules
IHSS57-36-20
ASD-B2-1521-B
Potentiometers, Variable Resistors
RV24YN
WXD4-23-3W
Computers, Office - Components, Accessories
DS-4008HCI
LB104V03(A1)
Cables, Wires - Management
NM-SF50+
CCK26.5-MM-190-30
Optical Inspection Equipment
AA924
A21K4B
View more