IGBT Transistors REVERSE CONDUCT IGBT 1200V 30A
IHW30N120R: IGBT Transistors REVERSE CONDUCT IGBT 1200V 30A
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Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 1200 V | ||
Maximum Gate Emitter Voltage : | +/- 20 V | Maximum Operating Temperature : | + 150 C | ||
Package / Case : | TO-247-3 | Packaging : | Tube |
Parameter |
Symbol |
Value |
Unit |
Collector-emitter voltage |
VCE |
1200 |
V |
DC collector current TC = 25 TC = 100 |
IC |
60 30 |
A |
Pulsed collector current, tp limited by Tjmax |
ICpuls |
90 | |
Turn off safe operating area (VCE 1200V, Tj 175) |
90 | ||
Diode forward current TC = 25 TC = 100 |
IF |
50 25 | |
Diode pulsed current, tp limited by Tjmax |
IFpuls |
75 | |
Diode surge non repetitive current, tp limited by Tjmax TC = 25, tp = 10ms, sine halfwave TC = 25, tp 2.5µs, sine halfwave TC = 100, tp 2.5µs, sine halfwave |
IFSM |
50 130 120 | |
Gate-emitter voltage Transient Gate-emitter voltage (tp < 5 ms) |
VGE |
±20 ±25 |
V |
Power dissipation TC = 25 |
Ptot |
395 |
W |
Operating junction temperature |
Tj |
-40...+175 |
|
Storage temperature |
Tstg |
-55...+175 | |
Soldering temperature, 1.6mm (0.063 in.) from case for 10s |
260 |