Position: Home  > All Categories> Integrated Circuits (ICs) > IHW15N120R

IHW15N120R

IGBT Transistors REVERSE CONDUCT IGBT 1200V 15A

product image

IHW15N120R Picture
See larger image
SeekIC No. : 00143749 Detail

IHW15N120R: IGBT Transistors REVERSE CONDUCT IGBT 1200V 15A

IHW15N120R Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
IHW15N120R
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/21

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 1200 V
Maximum Gate Emitter Voltage : +/- 20 V Maximum Operating Temperature : + 150 C
Package / Case : TO-247-3 Packaging : Tube    

Description

Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Collector- Emitter Voltage VCEO Max : 1200 V
Package / Case : TO-247-3


Features:

• Powerful monolithic Body Diode with very low forward voltage
• Body diode clamps negative voltages
• Trench and Fieldstop technology for 1200 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
• NPT technology offers easy parallel switching capability due to positive temperature coefficient in VCE(sat)
• Low EMI
• Qualified according to JEDEC1 for target applications
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/


Application

• Inductive Cooking
• Soft Switching Applications


Specifications

Parameter Symbol Value Unit
Collector-emitter voltage VCE 1200 V
DC collector current, limited by Tjmax
TC = 25
TC = 100		 IC 30
15		 A
Pulsed collector current, tp limited by Tjmax ICpuls 45  
Turn off safe operating area VCE 600V, Tj 175 - 45  
Diode forward current
TC = 25
TC = 100		 IF 23
13		  
Diode pulsed current, tp limited by Tjmax IFpuls 30  
Diode surge non repetitive current, tp limited by Tjmax
TC = 25, tp = 10ms, sine halfwave
TC= 25, tp 2.5µs, sine halfwave
TC = 100, tp 2.5µs, sine halfwave		 IFSM 50
130
120		  
Gate-emitter voltage VGE ±20
±25		 V
Power dissipation, TC = 25 Ptot 405 W
Operating junction temperature Tj -40...+175
Storage temperature Tstg -55...+175
Soldering temperature, 1.6mm (0.063 in.) from case for 10s - 260  



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Static Control, ESD, Clean Room Products
DPA5
PA800-A41
Kits
IT243
UVSC-110-4E1
Line Protection, Backups
BX0023
A20B-1008-0550
Cables, Wires
821-0814-a
415-0100-150
Prototyping Products
AVT4168
DE1
Transformers
TM-09210
BV222-1-00992
View more