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IHW15N120R

IGBT Transistors REVERSE CONDUCT IGBT 1200V 15A

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SeekIC No. : 00143749 Detail

IHW15N120R: IGBT Transistors REVERSE CONDUCT IGBT 1200V 15A

IHW15N120R Data Sheet

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Part Number:
IHW15N120R
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/7/15

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 1200 V
Maximum Gate Emitter Voltage : +/- 20 V Maximum Operating Temperature : + 150 C
Package / Case : TO-247-3 Packaging : Tube    

Description

Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Collector- Emitter Voltage VCEO Max : 1200 V
Package / Case : TO-247-3


Features:

• Powerful monolithic Body Diode with very low forward voltage
• Body diode clamps negative voltages
• Trench and Fieldstop technology for 1200 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
• NPT technology offers easy parallel switching capability due to positive temperature coefficient in VCE(sat)
• Low EMI
• Qualified according to JEDEC1 for target applications
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/


Application

• Inductive Cooking
• Soft Switching Applications


Specifications

Parameter Symbol Value Unit
Collector-emitter voltage VCE 1200 V
DC collector current, limited by Tjmax
TC = 25
TC = 100		 IC 30
15		 A
Pulsed collector current, tp limited by Tjmax ICpuls 45  
Turn off safe operating area VCE 600V, Tj 175 - 45  
Diode forward current
TC = 25
TC = 100		 IF 23
13		  
Diode pulsed current, tp limited by Tjmax IFpuls 30  
Diode surge non repetitive current, tp limited by Tjmax
TC = 25, tp = 10ms, sine halfwave
TC= 25, tp 2.5µs, sine halfwave
TC = 100, tp 2.5µs, sine halfwave		 IFSM 50
130
120		  
Gate-emitter voltage VGE ±20
±25		 V
Power dissipation, TC = 25 Ptot 405 W
Operating junction temperature Tj -40...+175
Storage temperature Tstg -55...+175
Soldering temperature, 1.6mm (0.063 in.) from case for 10s - 260  



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