IHW30N160R2, IHW30N60T, IHW30N90R Selling Leads, Datasheet
MFG:INFINEON Package Cooled:TO-247 D/C:07+
IHW30N160R2, IHW30N60T, IHW30N90R Datasheet download
Part Number: IHW30N160R2
MFG: INFINEON
Package Cooled: TO-247
D/C: 07+
IHW30N160R2, IHW30N60T, IHW30N90R
- Table of contents:
Info of IHW30N160R2
Info of IHW30N60T
Info of IHW30N90R
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About IHW15N120R2
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Datasheet: IHW15N120R2
File Size: 373928 KB
Manufacturer:
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About IHW15N120R2
PDF/DataSheet Download
Datasheet: IHW15N120R2
File Size: 373928 KB
Manufacturer:
Download : Click here to Download
About IHW15N120R2
PDF/DataSheet Download
Datasheet: IHW15N120R2
File Size: 373928 KB
Manufacturer:
Download : Click here to Download
IHW30N60T Maximum Ratings
| Parameter | Symbol | Value | Unit |
| Collector-emitter voltage | VCE | 600 | V |
| DC collector current, limited by Tjmax TC = 25 TC = 100 |
IC | 60 30 |
A |
| Pulsed collector current, tp limited by Tjmax | ICpuls | 90 | |
| Turn off safe operating area VCE 600V, Tj 175 | - | 90 | |
| Diode forward current TC = 25 TC = 100 |
IF | 23 13 |
|
| Diode pulsed current, tp limited by Tjmax | IFpuls | 30 | |
| Gate-emitter voltage | VGE | ±20 ±25 |
V |
| Short circuit withstand time2) VGE = 15V, VCC 400V, Tj 150 |
tSC | 5 | s |
| Power dissipation, TC = 25 | Ptot | 187 | W |
| Operating junction temperature | Tj | -40...+175 | |
| Storage temperature | Tstg | -55...+175 | |
| Soldering temperature, 1.6mm (0.063 in.) from case for 10s | - | 260 |
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
IHW30N60T Features
• Very low VCE(sat) 1.5 V (typ.)
• Maximum Junction Temperature 175
• Short circuit withstand time – 5s
• TrenchStop and Fieldstop technology for 600 V applications
offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- low VCE(sat)
• Positive temperature coefficient in VCE(sat)
• Low EMI
• Low Gate Charge
• Qualified according to JEDEC1 for target applications
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt
• Maximum Junction Temperature 175
• Short circuit withstand time – 5s
• TrenchStop and Fieldstop technology for 600 V applications
offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- low VCE(sat)
• Positive temperature coefficient in VCE(sat)
• Low EMI
• Low Gate Charge
• Qualified according to JEDEC1 for target applications
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt
IHW30N60T Typical Application
• Inductive Cooking
• Soft Switching Applications
• Soft Switching Applications
IHW30N90R Maximum Ratings
|
Parameter |
Symbol |
Value |
Unit |
| Collector-emitter voltage |
VCE |
900 |
V |
|
DC collector current |
IC |
60 30 |
A |
| Pulsed collector current, tp limited by Tjmax |
ICpuls |
90 | |
| Turn off safe operating area VCE 1200V, Tj 150 |
- |
90 | |
| Diode forward current TC=25 TC=100 |
IF |
60 30 | |
| Diode pulsed current, tp limited by Tjmax |
IFpuls |
90 | |
| Gate-emitter voltage Transient Gate-emitter voltage (tp < 5 ms) |
VGE |
±20 ±25 |
V |
| Power dissipation, TC = 25 |
Ptot |
454 |
W |
| Operating junction temperature |
Tj |
-40...+175 |
|
| Storage temperature |
Ts tg |
-55...+175 |
|
| Soldering temperature,1.6mm(0.063 in.)from case for 10s |
- |
260 |
IHW30N90R Features
• 1.5V typical saturation voltage of IGBT
• Trench and Fieldstop technology for 900 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- easy parallel switching capability due to positive temperature coefficient in VCE(sat)
• Low EMI
• Qualified according to JEDEC1 for target applications
• Application specific optimisation of inverse diode
• Pb-free lead plating; RoHS compliant
• Trench and Fieldstop technology for 900 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- easy parallel switching capability due to positive temperature coefficient in VCE(sat)
• Low EMI
• Qualified according to JEDEC1 for target applications
• Application specific optimisation of inverse diode
• Pb-free lead plating; RoHS compliant
IHW30N90R Typical Application
• Microwave Oven
• Soft Switching Applications for ZCS
• Soft Switching Applications for ZCS
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