IHW30N100T, IHW30N120R, IHW30N120R2 Selling Leads, Datasheet
MFG:INFINEON Package Cooled:TO-247 D/C:08+
IHW30N100T, IHW30N120R, IHW30N120R2 Datasheet download
Part Number: IHW30N100T
MFG: INFINEON
Package Cooled: TO-247
D/C: 08+
MFG:INFINEON Package Cooled:TO-247 D/C:08+
IHW30N100T, IHW30N120R, IHW30N120R2 Datasheet download
MFG: INFINEON
Package Cooled: TO-247
D/C: 08+
Want to post a buying lead? If you are not a member yet, please select the specific/related part number first and then fill the quantity and your contact details in the "Request for Quotation Form" on the left, and then click "Send RFQ".Your buying lead can then be posted, and the reliable suppliers will quote via our online message system or other channels soon.
TOP
PDF/DataSheet Download
Datasheet: IHW15N120R2
File Size: 373928 KB
Manufacturer:
Download : Click here to Download
PDF/DataSheet Download
Datasheet: IHW15N120R2
File Size: 373928 KB
Manufacturer:
Download : Click here to Download
PDF/DataSheet Download
Datasheet: IHW15N120R2
File Size: 373928 KB
Manufacturer:
Download : Click here to Download
Parameter | Symbol | Value | Unit |
Collector-emitter voltage | VCE | 1000 | V |
DC collector current TC = 25 TC = 100 |
IC | 60 30 |
A |
Pulsed collector current, tp limited by Tjmax | ICpuls | 90 | |
Turn off safe operating area VCE 1200V, Tj 150 | - | 90 | |
Diode forward current TC = 25 TC = 100 |
IF | 22 12 |
|
Diode pulsed current, tp limited by Tjmax | IFpuls | 36 | |
Gate-emitter voltage Transient Gate-emitter voltage (tp < 5 ms) |
VGE | ±20 ±25 |
V |
Power dissipation, TC = 25 | Ptot | 412 | W |
Operating junction temperature | Tj | -40...+175 | |
Storage temperature | Tstg | -55...+175 | |
Soldering temperature, 1.6mm (0.063 in.) from case for 10s | - | 260 |
Parameter |
Symbol |
Value |
Unit |
Collector-emitter voltage |
VCE |
1200 |
V |
DC collector current TC = 25 TC = 100 |
IC |
60 30 |
A |
Pulsed collector current, tp limited by Tjmax |
ICpuls |
90 | |
Turn off safe operating area (VCE 1200V, Tj 175) |
90 | ||
Diode forward current TC = 25 TC = 100 |
IF |
50 25 | |
Diode pulsed current, tp limited by Tjmax |
IFpuls |
75 | |
Diode surge non repetitive current, tp limited by Tjmax TC = 25, tp = 10ms, sine halfwave TC = 25, tp 2.5µs, sine halfwave TC = 100, tp 2.5µs, sine halfwave |
IFSM |
50 130 120 | |
Gate-emitter voltage Transient Gate-emitter voltage (tp < 5 ms) |
VGE |
±20 ±25 |
V |
Power dissipation TC = 25 |
Ptot |
395 |
W |
Operating junction temperature |
Tj |
-40...+175 |
|
Storage temperature |
Tstg |
-55...+175 | |
Soldering temperature, 1.6mm (0.063 in.) from case for 10s |
260 |
Parameter | Symbol | Value | Unit |
Collector-emitter voltage | VCE | 1200 | V |
DC collector current, limited by TC = 25 TC = 100 |
IC | 60 30 |
A |
Pulsed collector current, tp limited by Tjmax | ICpuls | 90 | |
Turn off safe operating area (VCE 1200V, Tj 175) | - | 90 | |
Diode forward current TC = 25 TC = 100 |
IF | 60 30 | |
Diode pulsed current, tp limited by Tjmax | IFpuls | 90 | |
Diode surge non repetitive current, tp limited by Tjmax TC = 25, tp = 10ms, sine halfwave TC = 25, tp 2.5µs, sine halfwave TC = 100, tp 2.5µs, sine halfwave |
IFSM | 50 130 120 | |
Gate-emitter voltage Transient Gate-emitter voltage (tp < 5 ms) |
VGE | ±20 ±25 |
V |
Power dissipation, TC = 25 | Ptot | 390 | W |
Operating junction temperature | Tj | -40...+175 | |
Operating junction temperature | Tstg | -55...+175 | |
Soldering temperature, 1.6mm (0.063 in.) from case for 10s | - | 260 |