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DC collector current, limited by Tjmax TC = 25 TC = 100
IC
30 15
A
Pulsed collector current, tp limited by Tjmax
ICpuls
45
Turn off safe operating area VCE 600V, Tj 175
-
45
Diode forward current TC = 25 TC = 100
IF
23 13
Diode pulsed current, tp limited by Tjmax
IFpuls
30
Diode surge non repetitive current, tp limited by Tjmax TC = 25, tp = 10ms, sine halfwave TC= 25, tp 2.5µs, sine halfwave TC = 100, tp 2.5µs, sine halfwave
IFSM
50 130 120
Gate-emitter voltage
VGE
±20 ±25
V
Power dissipation, TC = 25
Ptot
405
W
Operating junction temperature
Tj
-40...+175
Storage temperature
Tstg
-55...+175
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
-
260
IHW15N120R Features
• Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages • Trench and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior • NPT technology offers easy parallel switching capability due to positive temperature coefficient in VCE(sat) • Low EMI • Qualified according to JEDEC1 for target applications • Pb-free lead plating; RoHS compliant • Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/