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The HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D, and HGTP10N50E1D are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high voltage, low on-dissipation applications such as switching regulators and motor drivers. They feature a discrete anti-parallel diode that shunts current around the IGBT in the reverse direction without introducing carriers into the depletion region. These types can be operated directly from low power integrated circuits.
• 10A, 400V and 500V • VCE(ON): 2.5V Max. • TFALL: 1ms, 0.5ms • Low On-State Voltage • Fast Switching Speeds • High Input Impedance • Anti-Parallel Diode
HGTP10N40E1D Typical Application
• Power Supplies • Motor Drives • Protective Circuits
HGTP10N40E1D Connection Diagram
HGTP10N40F1D General Description
The IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25 and +150. The diode used in parallel with the IGBT is an ultrafast (tRR < 60ns) with soft recovery characteristic.
IGBTs are ideal for many high voltage switching applications operating at frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.
• 10A, 400V and 500V • Latch Free Operation • Typical Fall Time < 1.4ms • High Input Impedance • Low Conduction Loss • Anti-Parallel Diode • tRR < 60ns
HGTP10N40F1D Connection Diagram
HGTP10N50C1 General Description
The HGTH12N40C1, HGTH12N40E1, HGTH12N50C1, HGTH12N50E1, HGTP10N40C1, HGTP10N40E1, HGTP10N50C1 and HGTP10N50E1 are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high-voltage, low on-dissipation applications such switching regulators and motor drivers. These types can be operated directly from low-power integrated circuits.
