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HGTP10N40C1, HGTP10N40C1D, HGTP10N40E1

Table of contents:
Info of HGTP10N40C1
Info of HGTP10N40C1D
Info of HGTP10N40E1

HGTP10N40C1, HGTP10N40C1D, HGTP10N40E1 Selling Leads, Datasheet

MFG:Intersil/FAIRCHILD Package Cooled:TO-220AB D/C:08+

HGTP10N40C1, HGTP10N40C1D, HGTP10N40E1 Picture

HGTP10N40C1, HGTP10N40C1D, HGTP10N40E1 Datasheet download

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Part Number: HGTP10N40C1

MFG: Intersil/FAIRCHILD

Package Cooled: TO-220AB

D/C: 08+

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HGTP10N40C1 General Description

The HGTH12N40C1, HGTH12N40E1, HGTH12N50C1, HGTH12N50E1, HGTP10N40C1, HGTP10N40E1, HGTP10N50C1 and HGTP10N50E1 are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high-voltage, low on-dissipation applications such switching regulators and motor drivers. These types can be operated directly from low-power integrated circuits.

HGTP10N40C1 Maximum Ratings

Collector-Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V_CES 400 500 400 500 V
Collector-Gate Voltage RGE = 1MW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_CGR 400 500 400 500 V
Reverse Collector-Emitter Voltage . . . . . . . . . . . .  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V_ECS(rev.) 15 15 -5 -5 V
Gate-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  . . . . .V_GE ±20 ±20 ±20 ±20 V
Collector Current Continuous . . . . . . . . . . . . . . . . . . . . . . .  . . . . . . . . . . . . . . . . . . . . . . . . . . . .  . . . . . I_C12 12 10 10 A
Collector Current Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . .  . . . . . . . . . . . . . . . . . . . . . . . . . . . I_CM 17.5 17.5 17.5 17.5 A
Power Dissipation at TC = +25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  . . . . . P_D 75 75 60 60 W
Power Dissipation Derating Above TC > +25 . . . . . . . . . . .  . . . . . . . . . . . . . . . . . . . . . . .  . . . . .0.6 0.6 0.48 0.48 W/
Operating and Storage Junction Temperature Range . . . . TJ, TSTG -55 to +150 -55 to +150 -55 to +150 -55 to +150

HGTP10N40C1 Features

• 10A and 12A, 400V and 500V
• V_CE(ON): 2.5V Max.
• TFI: 1s, 0.5ms
• Low On-State Voltage
• Fast Switching Speeds
• High Input Impedance
• No Anti-Parallel Diode

HGTP10N40C1 Connection Diagram

HGTP10N40C1D General Description

The HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D, and HGTP10N50E1D are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high voltage, low on-dissipation applications such as switching regulators and motor drivers. They feature a discrete anti-parallel diode that shunts current around the IGBT in the reverse direction without introducing carriers into the depletion region. These types can be operated directly from low power integrated circuits.

HGTP10N40C1D Maximum Ratings

Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  .  .  .  .  .  .  .V_CES 400 500 V
Collector-Gate Voltage R_GE = 1MW . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  .  .  .  .  .  .     V_CGR400 500 V
Gate-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. .  .  .  .  .  .  .   V_GE ±20 ±20 V
Collector Current Continuous at T_C = +25 . . . . . . . . . . . . . . . . . . . . . .  .  .  .  .  .  .   I_C25 17.5 17.5 A
Collector Current Continuous at T_C = +90 . . . . . . . . . . . . . . . . . . . . . . . . . .   .  .  .  .  .  .   I_C90 10 10
Power Dissipation Total at T_C = +25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  .  .  .  .  .  .   P_D 75 75 W
Power Dissipation Derating T_C > +25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  .  .  .  .  .  . 0.6 0.6 W/
Operating and Storage Junction Temperature Range . . . . . . . . . . T_J, T_STG-55 to +150 -55 to +150

HGTP10N40C1D Features

• 10A, 400V and 500V
• V_CE(ON): 2.5V Max.
• TFALL: 1ms, 0.5ms
• Low On-State Voltage
• Fast Switching Speeds
• High Input Impedance
• Anti-Parallel Diode

HGTP10N40C1D Typical Application

• Power Supplies
• Motor Drives
• Protective Circuits

HGTP10N40C1D Connection Diagram

HGTP10N40E1 General Description

HGTP10N40E1 Maximum Ratings

HGTP10N40E1 Features

• 10A and 12A, 400V and 500V
• V_CE(ON): 2.5V Max.
• TFI: 1s, 0.5ms
• Low On-State Voltage
• Fast Switching Speeds
• High Input Impedance
• No Anti-Parallel Diode

HGTP10N40E1 Connection Diagram

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