HGT1S2N120CN

Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Collector- Emitter Voltage VCEO Max : 1200 V
Continuous Collector Current at 25 C : 13 A
Gate-Emitter Leakage Current : +/- 250 nA
Collector-Emitter Saturation Voltage : 2.05 V
Power Dissipation : 104 W
Package / Case : TO-262-3


Features:

• 13A, 1200V, T_C = 25°C
• 1200V Switching SOA Capability
• Typical Fall Time 360ns at T_J = 150°C
• Short Circuit Rating
• Low Conduction Loss
• Avalanche Rated
• Temperature Compensating SABER™ Model
  Thermal Impedance SPICE Model
  www.fairchildsemi.com
• Related Literature
• TB334 "Guidelines for Soldering Surface Mount
  Components to PC Boards"


Pinout




Specifications

Symbol	Parameter	Ratings	Units
BVCES	Collector to Emitter Voltage	1200	V
IC25 IC110	Collector Current Continuous At TC = 25°C At TC = 110°C	13 7	A
ICM	Collector Current Pulsed (Note 1)	20	A
VGES	Gate to Emitter Voltage Continuous	±20	V
VGEM	Gate to Emitter Voltage Pulsed	±30	V
SSOA	Switching SOA Operating Area at TJ = 150°C (Figure 2)	13A at 1200V	W
PD	Power Dissipation Total TC = 25°C Power Dissipation Derating TC > 25°C	104 0.83	W/°C
EAV	Forward Voltage Avalanche Energy (Note 2)	18	mJ
TJ, TSTG	Operating and Storage Junction Temperature Range	-55 to 150	°C
TL,Tpkg	Maximum Lead Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s Package Body for 10s, see Tech Brief 334	300 260	°C °C
tSC	Short Circuit Withstand Time (Note 3) at VGE = 15V	8	µs

Description

The HGTP2N120CN and HGT1S2N120CN are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. HGTP2N120CN and HGT1S2N120CN  have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.

The HGTP2N120CN and HGT1S2N120CN   IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.Formerly Developmental Type TA49313

Parameters:

Technical/Catalog Information	HGT1S2N120CN
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Input Type	Standard
Voltage - Collector Emitter Breakdown (Max)	1200V
Current - Collector (Ic) (Max)	13A
Vce(on) (Max) @ Vge, Ic	2.4V @ 15V, 2.6A
Power - Max	104W
Mounting Type	Through Hole
Package / Case	TO-262
Packaging	Tube
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	HGT1S2N120CN HGT1S2N120CN