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HGTD1N120BNS9A, HGTD1N120CNS, HGTD2N120BNS

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Info of HGTD1N120BNS9A
Info of HGTD1N120CNS
Info of HGTD2N120BNS

HGTD1N120BNS9A, HGTD1N120CNS, HGTD2N120BNS Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:N/A D/C:09+

HGTD1N120BNS9A, HGTD1N120CNS, HGTD2N120BNS Picture

HGTD1N120BNS9A, HGTD1N120CNS, HGTD2N120BNS Datasheet download

Five Points

Part Number: HGTD1N120BNS9A

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: N/A

D/C: 09+

Description: IGBT NPT N-CH 1200V 5.3A TO252AA

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HGTD1N120BNS9A Parameters

Technical/Catalog Information	HGTD1N120BNS9A
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Input Type	Standard
Voltage - Collector Emitter Breakdown (Max)	1200V
Current - Collector (Ic) (Max)	5.3A
Vce(on) (Max) @ Vge, Ic	2.9V @ 15V, 1A
Power - Max	60W
Mounting Type	Surface Mount
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
Packaging	Tape & Reel (TR)
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	HGTD1N120BNS9A HGTD1N120BNS9A

HGTD1N120CNS General Description

The HGTD1N120CNS, and the HGTP1N120CN are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.

The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.

Formerly Developmental Type TA49317.

HGTD1N120CNS Maximum Ratings

Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV_CES 1200 V
Collector Current Continuous At T_C = 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_C25 6.2 A
Collector Current Continuous At T_C = 110 . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I_C110 3.2 A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_CM 6 A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GES ±20 V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GEM±30 V
Switching Safe Operating Area at T_J = 150 (Figure 2) . . . . . . . . . . . . . . .SSOA 6A at 1200V
Power Dissipation Total at T_C = 25. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P_D60 W
Power Dissipation Derating T_C > 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.476 W/
Forward Voltage Avalanche Energy (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E_AV 10 mJ
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . T_J, T_STG-55 to 150
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_L300
Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_pkg 260
Short Circuit Withstand Time (Note 3) at V_GE= 15V. . . . . . . . . . . . . . . . . . . . . . . . . . t_SC 8 µs
Short Circuit Withstand Time (Note 3) at V_GE= 13V. . . . . . . . . . . . . . . . . . . . . . . . . t_SC 11 µs

HGTD1N120CNS Features

• 6.2A, 1200V, T_C = 25
• 1200V Switching SOA Capability
• Typical EOFF. . . . . . . . . . . . . . . . . . . 200µJ at T_J= 150
• Short Circuit Rating
• Low Conduction Loss
• Avalanche Rated
• Temperature Compensating SABER™ Model
Thermal Impedance SPICE Model
www.intersil.com
• Related Literature
- TB334, "Guidelines for Soldering Surface Mount
Components to PC Boards"

HGTD1N120CNS Connection Diagram

HGTD2N120BNS General Description

The HGTP2N120BN, HGTD2N120BNS, and HGT1S2N120BNS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.

The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.

Formerly Developmental Type TA49312.

HGTD2N120BNS Maximum Ratings

Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV_CES 1200 V
Collector Current Continuous
At T_C = 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_C25 12 A
At T_C = 110 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_C110 5.6 A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_CM20 A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..V_GES ±20 V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GEM ±30 V
Switching Safe Operating Area at T_J = 150oC (Figure 2) . . . . . . . . . . . . . SSOA 12A at 1200V
Power Dissipation Total at T_C = 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P_D 104 W
Power Dissipation Derating T_C > 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.83 W/
Forward Voltage Avalanche Energy (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. E_AV 18 mJ
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . .T_J, T_STG-55 to 150
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_L 300
Package Body for 10s, see Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_pkg 260
Short Circuit Withstand Time (Note 3) at V_GE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . t_SC8 µs
Short Circuit Withstand Time (Note 3) at V_GE = 12V. . . . . . . . . . . . . . . . . . . . . . . . . t_SC15 µs

HGTD2N120BNS Features

• 12A, 1200V, T_C = 25
• 1200V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 160ns at T_J = 150
• Short Circuit Rating
• Low Conduction Loss
• Avalanche Rated
• Thermal Impedance SPICE Model
Temperature Compensating SABER™ Model
www.intersil.com
• Related Literature
- TB334 "Guidelines for Soldering Surface Mount
Components to PC Boards"

HGTD2N120BNS Connection Diagram

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