IGBT Transistors 43A 1200V NCh w/Anti Parallel Hyprfst Dde
HGTG11N120CND: IGBT Transistors 43A 1200V NCh w/Anti Parallel Hyprfst Dde
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Features: • 35A, 1200V, TC = 25• 1200V Switching SOA Capability• Typical Fall Ti...
Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 1200 V | ||
Collector-Emitter Saturation Voltage : | 2.1 V | Maximum Gate Emitter Voltage : | +/- 20 V | ||
Continuous Collector Current at 25 C : | 43 A | Gate-Emitter Leakage Current : | +/- 250 nA | ||
Power Dissipation : | 298 W | Maximum Operating Temperature : | + 150 C | ||
Package / Case : | TO-247-3 | Packaging : | Tube |
Product | Product status | Eco Status | Pricing* | Package type | Leads | Packing method | Package Drawing | Package Marking Convention** |
---|---|---|---|---|---|---|---|---|
HGTG11N120CND | Full Production | RoHS Compliant | $4.06 | TO-247 | 3 | RAIL | TBD | Line 1: $Y (Fairchild logo) &Z (Asm. Plant Code) &3 (3-Digit Date Code) &K Line 2: 11N120CND |
* Fairchild 1,000 piece Budgetary Pricing |
** A sample button will appear if the part is available through Fairchild's on-line samples program. If there is no sample button, please contact a Fairchild distributor to obtain samples |
Package marking information for product HGTG11N120CND is available. Click here for more information . |
Technical/Catalog Information | HGTG11N120CND |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Input Type | Standard |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Current - Collector (Ic) (Max) | 35A |
Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 11A |
Power - Max | 298W |
Mounting Type | Through Hole |
Package / Case | TO-247 |
Packaging | Tube |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | HGTG11N120CND HGTG11N120CND |