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HGT1S5N120CNDS, HGT1S5N120CNS, HGT1S7N60A40S

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Info of HGT1S5N120CNDS
Info of HGT1S5N120CNS
Info of HGT1S7N60A40S

HGT1S5N120CNDS, HGT1S5N120CNS, HGT1S7N60A40S Selling Leads, Datasheet

MFG:Intersil/FAIRCHILD Package Cooled:TO-263 D/C:08+

HGT1S5N120CNDS, HGT1S5N120CNS, HGT1S7N60A40S Picture

HGT1S5N120CNDS, HGT1S5N120CNS, HGT1S7N60A40S Datasheet download

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Part Number: HGT1S5N120CNDS

MFG: Intersil/FAIRCHILD

Package Cooled: TO-263

D/C: 08+

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HGT1S5N120CNDS General Description

The HGTG5N120CND, HGTP5N120CND and HGT1S5N120CNDS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT used is developmental type TA49309. The diode used in anti-parallel is developmental type TA49058.

The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.

Formerly Developmental Type TA49307.

HGT1S5N120CNDS Maximum Ratings

Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV_CES 1200 V
Collector Current Continuous At T_C = 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_C25 25 A
Collector Current Continuous At T_C = 110 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_C110 12 A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_CM 40 A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V_GES±20 V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V_GEM ±30 V
Switching Safe Operating Area at T_J = 150, Figure 2 . . . . . . . . . . . . . . SSOA 30A at 1200V
Power Dissipation Total at T_C = 25. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P_D 167 W
Power Dissipation Derating T_C > 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.33 W/
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . T_J, T_STG -55 to 150
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_L300
Package Body for 10s, see Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T_pkg 260
Short Circuit Withstand Time (Note 2) at V_GE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . t_SC 8 µs
Short Circuit Withstand Time (Note 2) at V_GE = 12V. . . . . . . . . . . . . . . . . . . . . . . . ..t_SC 15 µs

HGT1S5N120CNDS Features

• 25A, 1200V, T_C = 25
• 1200V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 350ns at T_J= 150
• Short Circuit Rating
• Low Conduction Loss
• Temperature Compensating SABER™ Model
Thermal Impedance SPICE Model
www.intersil.com
• Related Literature
- TB334 "Guidelines for Soldering Surface Mount
Components to PC Boards"

HGT1S5N120CNDS Connection Diagram

HGT1S5N120CNS General Description

The HGTP5N120CN and HGT1S5N120CNS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.

The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.

Formerly Developmental Type TA49309.

HGT1S5N120CNS Maximum Ratings

Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV_CES 1200 V
Collector Current Continuous At T_C= 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_C25 25 A
Collector Current Continuous At T_C = 110 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_C11012 A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_CM 40 A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V_GES ±20 V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GEM ±30 V
Switching Safe Operating Area at T_J= 150oC, Figure 2 . . . . . . . . . . . . . SSOA 30A at 1200V
Power Dissipation Total at T_C = 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P_D 167 W
Power Dissipation Derating T_C > 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.33 W/
Forward Voltage Avalanche Energy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. E_AV 36 mJ
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . T_J, T_STG -55 to 150
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_L 300
Package Body for 10s, see Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T_pkg 260
Short Circuit Withstand Time (Note 2) at V_GE = 15V. . . . . . . . . . . . . . . . . . . . . . . . .t_SC 8 µs
Short Circuit Withstand Time (Note 2) at VGE = 12V. . . . . . . . . . . . . . . . . . . . . . . .t_SC15 µs

HGT1S5N120CNS Features

• 25A, 1200V, T_C= 25
• 1200V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 350ns at T_J = 150
• Short Circuit Rating
• Low Conduction Loss
• Avalanche Rated
• Temperature Compensating SABER™ Model
Thermal Impedance SPICE Model
www.intersil.com
• Related Literature
- TB334 "Guidelines for Soldering Surface Mount
Components to PC Boards"

HGT1S5N120CNS Connection Diagram

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