CPV364M4KPBF, CPV364M4U, CPV364MF Selling Leads, Datasheet
MFG:IR Package Cooled:06+ D/C:12
CPV364M4KPBF, CPV364M4U, CPV364MF Datasheet download
Part Number: CPV364M4KPBF
MFG: IR
Package Cooled: 06+
D/C: 12
MFG:IR Package Cooled:06+ D/C:12
CPV364M4KPBF, CPV364M4U, CPV364MF Datasheet download
MFG: IR
Package Cooled: 06+
D/C: 12
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Datasheet: CPV362M4F
File Size: 288085 KB
Manufacturer:
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Datasheet: CPV364M4U
File Size: 280054 KB
Manufacturer: IRF [International Rectifier]
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PDF/DataSheet Download
Datasheet: CPV364MF
File Size: 471293 KB
Manufacturer: IRF [International Rectifier]
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The IGBT technology is the key to International Rectifier's advanced line of IMS (Insulated Metal Substrate) Power Modules. These modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET.
This superior technology has now been coupled to a state of the art materials system that maximizes power throughput with low thermal resistance. This package is highly suited to motor drive applications and where space is at a premium.
Parameter | Max. | Units | |
VCES | Collector-to-Emitter Voltage | 600 | V |
IC @ TC = 25°C | Continuous Collector Current each IGBT | 20 | A |
IC @ TC = 100 | Continuous Collector Currenteach IGBT | 10 | A |
ICM | Pulsed Collector Current | 60 | A |
ILM | Clamped Inductive Load Current | 60 | A |
IF @ TC = 100 | Diode Continuous Forward Current | 60 | A |
IFM | Diode Maximum Forward Current | 9.3 | A |
VGE | Gate-to-Emitter Voltage | ±20 | V |
VISOL | Isolation Voltage, any terminal to case, 1 min | 2500 | VRMS |
PD @ TC = 25 | Maximum Power Dissipation, each IGBT | 63 | W |
PD @ TC = 100 | Maximum Power Dissipation, each IGBT | 25 | W |
TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to +150 | |
Soldering Temperature, for 10 sec. | 300 (0.063 in. (1.6mm) from case) | ||
Mounting torque, 6-32 or M3 screw. | 5-7 lbf•in ( 0.55-0.8 N•m) |
The IGBT technology is the key to International Rectifier's advanced line of IMS (Insulated Metal Substrate) Power Modules. These modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET.
This superior technology has now been coupled to a state of the art materials system that maximizes power throughput with low thermal resistance. This package is highly suited to motor drive applications and where space is at a premium.
Parameter | Max. | Units | |
VCES | Collector-to-Emitter Voltage | 600 | V |
IC @ TC = 25°C | Continuous Collector Current each IGBT | 27 | A |
IC @ TC = 100 | Continuous Collector Currenteach IGBT | 15 | A |
ICM | Pulsed Collector Current | 80 | A |
ILM | Clamped Inductive Load Current | 80 | A |
IF @ TC = 100 | Diode Continuous Forward Current | 9.3 | A |
IFM | Diode Maximum Forward Current | 80 | A |
VGE | Gate-to-Emitter Voltage | ±20 | V |
VISOL | Isolation Voltage, any terminal to case, 1 min | 2500 | VRMS |
PD @ TC = 25 | Maximum Power Dissipation, each IGBT | 63 | W |
PD @ TC = 100 | Maximum Power Dissipation, each IGBT | 25 | W |
TJ TSTG |
Operating Junction and Storage Temperature Range |
-40 to +150 | |
Soldering Temperature, for 10 sec. | 300 (0.063 in. (1.6mm) from case) | ||
Mounting torque, 6-32 or M3 screw. | 5-7 lbf?in ( 0.55-0.8 N?m) |