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CPV363MF, CPV364M4F, CPV364M4K

CPV363MF, CPV364M4F, CPV364M4K Selling Leads, Datasheet

MFG:IR  Package Cooled:MODULE  D/C:N/A

CPV363MF, CPV364M4F, CPV364M4K Picture

CPV363MF, CPV364M4F, CPV364M4K Datasheet download

Five Points

Part Number: CPV363MF

 

MFG: IR

Package Cooled: MODULE

D/C: N/A

 

 

 
 
 
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About CPV363MF

PDF/DataSheet Download

Datasheet: CPV363MF

File Size: 464441 KB

Manufacturer: IRF [International Rectifier]

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CPV364M4F Suppliers

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About CPV362M4F

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Datasheet: CPV362M4F

File Size: 288085 KB

Manufacturer:

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CPV364M4K Suppliers

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  • CPV364M4K

  • Vendor: IR Pack: ZIP D/C: 06+& Qty: 8000 Note: New original,in stock?"  Adddate: 2024-11-28
  • Inquire Now
  • Shenzhen TERLAI Technology Co.LTD   China
    Contact: Mr.Robert   MSN:halozhu@live.cn
    Tel: +86-755-83503905
    Fax: +86-755-82555226
    (84)
  • CPV364M4K

  • D/C: 08+& Qty: 100 Note: new and original  Adddate: 2024-11-28
  • Inquire Now
  • Xinyee International Company   China
    Contact: Ms.BettyLin   MSN:xinyee2008@hotmail.com
    Tel: 0086-0755-83181759
    Fax: 0086-0755-83181759
    (85)

About CPV364M4K

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Datasheet: CPV364M4K

File Size: 290575 KB

Manufacturer: IRF [International Rectifier]

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CPV363MF General Description

The IGBT technology is the key to International Rectifier's advanced line ofIMS (Insulated Metal Substrate) Power Modules. These modules are moreefficient than comparable bipolar transistor modules, while at the same timehaving the simpler gate-drive requirements of the familiar power MOSFET.This superior technology has now been coupled to a state of the art materialssystem that maximizes power throughput with low thermal resistance. Thispackage is highly suited to motor drive applications and where space is at apremium.

CPV363MF Maximum Ratings

  Parameter Max. Units
VCES Collector-to-Emitter Voltage 600 V
IC @ TC  = 25°C Continuous Collector Current each IGBT 16 A
IC @ TC = 100 Continuous Collector Currenteach IGBT 8.7 A
ICM Pulsed Collector Current 50 A
ILM Clamped Inductive Load Current 50 A
IF @ TC = 100 Diode Continuous Forward Current 6.1 A
IFM Diode Maximum Forward Current 50 A
VGE Gate-to-Emitter Voltage ±20 V
VISOL Isolation Voltage, any terminal to case, 1 min 2500 VRMS
PD @ TC = 25 Maximum Power Dissipation, each IGBT 36 W
PD @ TC = 100 Maximum Power Dissipation, each IGBT 14 W
TJ
TSTG
Operating Junction and
Storage Temperature Range
-40 to +150
  Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
  Mounting torque, 6-32 or M3 screw. 5-7 lbf?in ( 0.55-0.8 N?m)  

CPV363MF Features

• Fully isolated printed circuit board mount package
• Switching-loss rating includes all "tail" losses
• HEXFREDTM soft ultrafast diodes
• Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve

CPV364M4K General Description

The IGBT technology is the key to International Rectifier's advanced line of IMS (Insulated Metal Substrate) Power Modules. These modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET.

This superior technology has now been coupled to a state of the art materials system that maximizes power throughput with low thermal resistance. This package is highly suited to motor drive applications and where space is at a premium.

CPV364M4K Maximum Ratings

  Parameter Max. Units
VCES Collector-to-Emitter Voltage 600 V
IC @ TC = 25 Continuous Collector Current 24 A
IC @ TC = 100 Continuous Collector Current 13 A
ICM Pulsed Collector Current Å 48 A
ILM Clamped Inductive Load Current Ç 48 A
tsc Short Circuit Withstand Time 9.3 µs
VGE Gate-to-Emitter Voltage ±20 V
VISOL Isolation Voltage, any terminal to case, 1 min 2500 VRMS
PD @ TC = 25 Maximum Power Dissipation, each IGBT 63 W
PD @ TC = 100 Maximum Power Dissipation, each IGBT 25 W
TJ
TSTG
Operating Junction and
Storage Temperature Range
-55 to +150
  Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
  Mounting torque, 6-32 or M3 screw. 5-7 lbf•in ( 0.55-0.8 N•m)  

CPV364M4K Features

• Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125, VGE = 15V
• Fully isolated printed circuit board mount package
• Switching-loss rating includes all "tail" losses
• HEXFREDTM soft ultrafast diodes
• Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve

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