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CPV362MF, CPV362MK, CPV362MM

Table of contents:
Info of CPV362MF
Info of CPV362MK
Info of CPV362MM

CPV362MF, CPV362MK, CPV362MM Selling Leads, Datasheet

MFG:IR Package Cooled:N/A D/C:2010+

CPV362MF, CPV362MK, CPV362MM Datasheet download

Five Points

Part Number: CPV362MF

MFG: IR

Package Cooled: N/A

D/C: 2010+

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CPV362MF General Description

The IGBT technology is the key to International Rectifier's advanced line of IMS (Insulated Metal Substrate) Power Modules. These modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET.

This superior technology has now been coupled to a state of the art materials system that maximizes power throughput with low thermal resistance. This package is highly suited to motor drive applications and where space is at a premium.

CPV362MF Maximum Ratings

	Parameter	Max.	Units
V_CES	Collector-to-Emitter Voltage	600	V
I_C@ T_C = 25°C	Continuous Collector Current each IGBT	8.8	A
I_C@ T_C = 100	Continuous Collector Currenteach IGBT	4.8	A
I_CM	Pulsed Collector Current	26	A
I_LM	Clamped Inductive Load Current	26	A
I_F @ T_C = 100	Diode Continuous Forward Current	3.4	A
I_FM	Diode Maximum Forward Current	26	A
V_GE	Gate-to-Emitter Voltage	±20	V
V_ISOL	Isolation Voltage, any terminal to case, 1 min	2500	V_RMS
P_D @ T_C = 25	Maximum Power Dissipation, each IGBT	23	W
P_D @ T_C = 100	Maximum Power Dissipation, each IGBT	9.1	W
T_J T_STG	Operating Junction and Storage Temperature Range	-40 to +150
	Soldering Temperature, for 10 sec.	300 (0.063 in. (1.6mm) from case)
	Mounting torque, 6-32 or M3 screw.	5-7 lbf•in ( 0.55-0.8 N•m)

CPV362MF Features

• Fully isolated printed circuit board mount package
• Switching-loss rating includes all "tail" losses
• HEXFREDTM soft ultrafast diodes
• Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve

CPV362MK General Description

The IGBT technology is the key to International Rectifier's advanced line of IMS Insulated Metal Substrate) Power Modules. These modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET. This superior technology has now been coupled to a state of the art materials system that maximizes power throughput with low thermal resistance. This package is highly suited to power applications and where space is at a premium.

These new short circuit rated devices are especially suited for motor control and other totem-pole applications requiring short circuit withstand capability.

CPV362MK Maximum Ratings

	Parameter	Max.	Units
V_CES	Collector-to-Emitter Voltage	600	V
I_C@ T_C = 25	Continuous Collector Current each IGBT	5.7	A
I_C@ T_C = 100	Continuous Collector Currenteach IGBT	3.0	A
I_CM	Pulsed Collector Current	11	A
I_LM	Clamped Inductive Load Current	11	A
I_F @ T_C = 100	Diode Continuous Forward Current	3.4	A
I_FM	Diode Maximum Forward Current	11	A
t_sc	Short Circuit Withstand Time	10	µs
V_GE	Gate-to-Emitter Voltage	±20	V
V_ISOL	Isolation Voltage, any terminal to case, 1 min	2500	V_RMS
P_D @ T_C = 25	Maximum Power Dissipation, each IGBT	23	W
P_D @ T_C = 100	Maximum Power Dissipation, each IGBT	9.1	W
T_J T_STG	Operating Junction and Storage Temperature Range	-40 to +150
	Soldering Temperature, for 10 sec.	300 (0.063 in. (1.6mm) from case)
	Mounting torque, 6-32 or M3 screw.	5-7 lbf?in ( 0.55-0.8 N?m)

CPV362MK Features

• Short Circuit Rated - 10µs @ 125, V _GE = 15V Fully isolated printed circuit board mount package
• Switching-loss rating includes all "tail" losses
• HEXFRED^TM soft ultrafast diodes
• Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve

CPV362MM General Description

The IGBT technology is the key to International Rectifier's advanced line of IMS (Insulated Metal Substrate) Power Modules. These modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET. This superior technology has now been coupled to a state of the art materials system that maximizes power throughput with low thermal resistance. This package is highly suited to power applications and where space is at a premium.

CPV362MM Maximum Ratings

	Parameter	Max.	Units
V_CES	Collector-to-Emitter Voltage	600	V
I_C@ T_C = 25°C	Continuous Collector Current each IGBT	7.9	A
I_C@ T_C = 100	Continuous Collector Currenteach IGBT	4.6	A
I_CM	Pulsed Collector Current	16	A
I_LM	Clamped Inductive Load Current	16	A
I_F @ T_C = 100	Diode Continuous Forward Current	3.4	A
I_FM	Diode Maximum Forward Current	16	A
t_sc	Short Circuit Withstand Time	10	µs
V_GE	Gate-to-Emitter Voltage	±20	V
V_ISOL	Isolation Voltage, any terminal to case, 1 min	2500	V_RMS
P_D @ T_C = 25	Maximum Power Dissipation, each IGBT	23	W
P_D @ T_C = 100	Maximum Power Dissipation, each IGBT	9.1	W
T_J T_STG	Operating Junction and Storage Temperature Range	-40 to +150
	Soldering Temperature, for 10 sec.	300 (0.063 in. (1.6mm) from case)
	Mounting torque, 6-32 or M3 screw.	5-7 lbf?in ( 0.55-0.8 N?m)

CPV362MM Features

• Short Circuit Rated - 10µs @ 125, V _GE = 15V Fully isolated printed circuit board mount package
• Switching-loss rating includes all "tail" losses
• HEXFRED^TM soft ultrafast diodes
• Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve

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