CPV362M4FPbF

The CPV362M4FPbF is designed as one kind of IGBT SIP modules (fast IGBT). The IGBT technology is the key to the advanced line of IMS (insulated metal substrate) power modules. These modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET. This superior technology has now been coupled to a state of the art materials system that maximizes power throughput with low thermal resistance. This package is highly suited to motor drive applications and where space is at a premium.

CPV362M4FPbF has six features. (1)Fully isolated printed circuit board mount package. (2)Switching-loss rating includes all "tail" losses. (3)HEXFRED soft ultrafast diodes. (4)Optimized for medium speed 1 to 10kHz see fig. 1 for current vs. frequency curve. (5)Totally lead (Pb)-free. (6)Designed and qualified for industrial level. Those are all the main features.

Some absolute maximum ratings of CPV362M4FPbF have been concluded into several points as follow. (1)Its collector to emitter voltage would be 600V. (2)Its continuous collector current, each IGBT would be 8.8A at Tc=25°C and would be 4.8A at Tc=100°C. (3)Its pulsed collector current would be 26A. (4)Its clamped inductive load current would be 800A. (5)Its diode continuous forward current would be 3.4A. (6)Its diode maximum forward current would be 26A. (7)Its gate to emitter voltage would be +/-20V. (8)Its isolation voltage would be 2500Vrms. (9)Its maximum power dissipation, each IGBT would be 23W at Tc=25°C and would be 9.1W at Tc=100°C. (10)Its operating junction and storage  temperature range would be from -40°C to +150°C. (11)Its soldering temperature would be 300°C. (12)Its mounting torque would be from 5lbf.in to 7lbf.in. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics of CPV362M4FPbF are concluded as follow. (1)Its collector to emitter breakdown voltage would be min 600V. (2)Its temperature coeff. of breakdown voltage would be typ 0.72V/°C. At present we have not got so much information about this IC and we would try hard to get more information about it. If you have any question or suggestion or want to know more information please contact us for details. Thank you!