Voltage - Collector Emitter Breakdown (Max): 600V
Input: Standard
NTC Thermistor: No
IGBT Type: -
Series: -
Current - Collector Cutoff (Max): 250µA
Mounting Type: Through Hole
Configuration: Three Phase Inverter
Manufacturer: Vishay Semiconductors
Package / Case: 19-SIP (13 Leads), IMS-2
Supplier Device Package: IMS-2
Power - Max: 23W
Vce(on) (Max) @ Vge, Ic: 1.93V @ 15V, 3A
Current - Collector (Ic) (Max): 5.7A
Input Capacitance (Cies) @ Vce: 0.45nF @ 30V
Features: • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10s @ 125°C, VGE = 15V
• Fully isolated printed circuit board mount package
• Switching-loss rating includes all "tail" losses
• HEXFREDTM soft ultrafast diodes
• Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve
Specifications
| |
Parameter |
Max. |
Units |
VCES
|
Collector-to-Emitter Voltage |
600 |
V |
| IC @ TC = 25°C |
Continuous Collector Current, each IGBT |
5.7 |
A |
IC @ TC = 100°C
|
Continuous Collector Current, each IGBT |
3.0 |
ICM |
Pulsed Collector Current |
11 |
| ILM |
Clamped Inductive Load Current |
11 |
IF @ TC = 100°C
|
Diode Continuous Forward Current |
3.4 |
| IFM |
Diode Maximum Forward Current |
11 |
| tsc |
Short Circuit Withstand Time |
10 |
s |
VGE |
Gate-to-Emitter Voltage |
± 20 |
V |
VISOL
|
Isolation Voltage, any terminal to case, 1 minute |
2500 |
VRMS |
| PD @ TC = 25°C |
Maximum Power Dissipation, each IGBT |
23 |
W |
| PD @ TC = 100°C |
Maximum Power Dissipation, each IGBT |
9.1 |
TJ
TSTG |
Operating Junction and
Storage Temperature Range |
-40 to +150 |
°C |
| |
Soldering Temperature, for 10 sec.
|
300 (0.063 in. (1.6mm) from case) |
|
| |
Mounting torque, 6-32 or M3 screw |
5-7 lbf•in (0.55 - 0.8 N•m) |
|
DescriptionThe IGBT technology is the key to International Rectifier's advanced line of IMS (Insulated Metal Substrate) Power Modules. CPV362M4K are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET. This superior technology has now been coupled to a state of the art materials system that maximizes power throughput with low thermal resistance. This
package is highly suited to motor drive applications and where space is at a premium.
CPV362M4K Data Sheet
