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CPV363M4F, CPV363M4K, CPV363M4U

CPV363M4F, CPV363M4K, CPV363M4U Selling Leads, Datasheet

MFG:IR  D/C:N/A

CPV363M4F, CPV363M4K, CPV363M4U Picture

CPV363M4F, CPV363M4K, CPV363M4U Datasheet download

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Part Number: CPV363M4F

 

MFG: IR

Package Cooled:

D/C: N/A

 

 

 
 
 
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  • CPV363M4F

  • D/C: 08+& Qty: 100 Note: new and original  Adddate: 2024-11-28
  • Inquire Now
  • Xinyee International Company   China
    Contact: Ms.BettyLin   MSN:xinyee2008@hotmail.com
    Tel: 0086-0755-83181759
    Fax: 0086-0755-83181759
    (85)

About CPV363M4F

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Datasheet: CPV363M4F

File Size: 275526 KB

Manufacturer: IRF [International Rectifier]

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About CPV363M4K

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Datasheet: CPV363M4K

File Size: 181242 KB

Manufacturer: IRF [International Rectifier]

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About CPV363M4U

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Datasheet: CPV363M4U

File Size: 282082 KB

Manufacturer: IRF [International Rectifier]

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CPV363M4F General Description

The IGBT technology is the key to International Rectifier's advanced line of IMS (Insulated Metal Substrate) Power Modules. These modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET. This superior technology has now been coupled to a state of the art materials system that maximizes power throughput with low thermal resistance. This package is highly suited to motor drive applications and where space is at a premium.

CPV363M4F Maximum Ratings

Parameter
Max.
Units
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
tsc
VGE
VISOL
PD @ TC = 25°C
PD @ TC = 100°C
Collector-to-Emitter Voltage
Continuous Collector Current, each IGBT
Continuous Collector Current, each IGBT
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Isolation Voltage, any terminal to case, 1 minute
Maximum Power Dissipation, each IGBT
Maximum Power Dissipation, each IGBT
600
16
8.7
50
50
6.1
50
±20
2500
36
14
V


A



µs
V
VRMS
W
TJ
TSTG
Operating Junction and
Storage Temperature Range
-40 to +150
°C
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
300 (0.063 in. (1.6mm) from case)
5-7 lbf•in (0.55 - 0.8 N•m)

CPV363M4F Features

• Fully isolated printed circuit board mount package
• Switching-loss rating includes all "tail" losses
• HEXFREDTM soft ultrafast diodes
• Optimized for medium operating (1 to 10 kHz) See Fig. 1 for Current vs. Frequency curve

CPV363M4K General Description

The IGBT technology is the key to International Rectifier's advanced line of IMS (Insulated Metal Substrate) Power Modules. These modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET. This superior technology has now been coupled to a state of the art materials system that maximizes power throughput with low thermal resistance. This package is highly suited to motor drive applications and where space is at a premium.

CPV363M4K Maximum Ratings

Parameter
Max.
Units
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
tsc
VGE
VISOL
PD @ TC = 25°C
PD @ TC = 100°C
Collector-to-Emitter Voltage
Continuous Collector Current, each IGBT
Continuous Collector Current, each IGBT
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Isolation Voltage, any terminal to case, 1 minute
Maximum Power Dissipation, each IGBT
Maximum Power Dissipation, each IGBT
600
11
6.0
22
22
6.1
22
10
± 20
2500
36
14
V


A



µs
V
VRMS
W
TJ
TSTG
Operating Junction and
Storage Temperature Range
-40 to +150
°C
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
300 (0.063 in. (1.6mm) from case)
5-7 lbf•in (0.55 - 0.8 N•m)

CPV363M4K Features

• Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V
• Fully isolated printed circuit board mount package
• Switching-loss rating includes all "tail" losses
• HEXFREDTM soft ultrafast diodes
• Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve

CPV363M4U General Description

The IGBT technology is the key to International Rectifier's advanced line of IMS (Insulated Metal Substrate) Power Modules. These modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET. This superior technology has now been coupled to a state of the art materials system that maximizes power throughput with low thermal resistance. This package is highly suited to motor drive applications and where space is at a premium.

CPV363M4U Maximum Ratings

Parameter
Max.
Units
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
tsc
VGE
VISOL
PD @ TC = 25°C
PD @ TC = 100°C
Collector-to-Emitter Voltage
Continuous Collector Current, each IGBT
Continuous Collector Current, each IGBT
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Isolation Voltage, any terminal to case, 1 minute
Maximum Power Dissipation, each IGBT
Maximum Power Dissipation, each IGBT
600
13
6.8
40
40
6.1
40
±20
2500
36
14
V


A



µs
V
VRMS
W
TJ
TSTG
Operating Junction and
Storage Temperature Range
-40 to +150
°C
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
300 (0.063 in. (1.6mm) from case)
5-7 lbf•in (0.55 - 0.8 N•m)

CPV363M4U Features

• Fully isolated printed circuit board mount package
• Switching-loss rating includes all "tail" losses
• HEXFREDTM soft ultrafast diodes
• Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve

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