CPV363M4F, CPV363M4K, CPV363M4U Selling Leads, Datasheet
MFG:IR D/C:N/A
CPV363M4F, CPV363M4K, CPV363M4U Datasheet download
Part Number: CPV363M4F
MFG: IR
Package Cooled:
D/C: N/A
MFG:IR D/C:N/A
CPV363M4F, CPV363M4K, CPV363M4U Datasheet download
MFG: IR
Package Cooled:
D/C: N/A
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Datasheet: CPV363M4F
File Size: 275526 KB
Manufacturer: IRF [International Rectifier]
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PDF/DataSheet Download
Datasheet: CPV363M4K
File Size: 181242 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: CPV363M4U
File Size: 282082 KB
Manufacturer: IRF [International Rectifier]
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The IGBT technology is the key to International Rectifier's advanced line of IMS (Insulated Metal Substrate) Power Modules. These modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET. This superior technology has now been coupled to a state of the art materials system that maximizes power throughput with low thermal resistance. This package is highly suited to motor drive applications and where space is at a premium.
Parameter |
Max. |
Units | |
VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM tsc VGE VISOL PD @ TC = 25°C PD @ TC = 100°C |
Collector-to-Emitter Voltage Continuous Collector Current, each IGBT Continuous Collector Current, each IGBT Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current Short Circuit Withstand Time Gate-to-Emitter Voltage Isolation Voltage, any terminal to case, 1 minute Maximum Power Dissipation, each IGBT Maximum Power Dissipation, each IGBT |
600 16 8.7 50 50 6.1 50 ±20 2500 36 14 |
V A µs V VRMS W |
TJ TSTG |
Operating Junction and Storage Temperature Range |
-40 to +150 |
°C |
Soldering Temperature, for 10 sec. Mounting torque, 6-32 or M3 screw. |
300 (0.063 in. (1.6mm) from case) 5-7 lbf•in (0.55 - 0.8 N•m) |
The IGBT technology is the key to International Rectifier's advanced line of IMS (Insulated Metal Substrate) Power Modules. These modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET. This superior technology has now been coupled to a state of the art materials system that maximizes power throughput with low thermal resistance. This package is highly suited to motor drive applications and where space is at a premium.
Parameter |
Max. |
Units | |
VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM tsc VGE VISOL PD @ TC = 25°C PD @ TC = 100°C |
Collector-to-Emitter Voltage Continuous Collector Current, each IGBT Continuous Collector Current, each IGBT Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current Short Circuit Withstand Time Gate-to-Emitter Voltage Isolation Voltage, any terminal to case, 1 minute Maximum Power Dissipation, each IGBT Maximum Power Dissipation, each IGBT |
600 11 6.0 22 22 6.1 22 10 ± 20 2500 36 14 |
V A µs V VRMS W |
TJ TSTG |
Operating Junction and Storage Temperature Range |
-40 to +150 |
°C |
Soldering Temperature, for 10 sec. Mounting torque, 6-32 or M3 screw. |
300 (0.063 in. (1.6mm) from case) 5-7 lbf•in (0.55 - 0.8 N•m) |
The IGBT technology is the key to International Rectifier's advanced line of IMS (Insulated Metal Substrate) Power Modules. These modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET. This superior technology has now been coupled to a state of the art materials system that maximizes power throughput with low thermal resistance. This package is highly suited to motor drive applications and where space is at a premium.
Parameter |
Max. |
Units | |
VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM tsc VGE VISOL PD @ TC = 25°C PD @ TC = 100°C |
Collector-to-Emitter Voltage Continuous Collector Current, each IGBT Continuous Collector Current, each IGBT Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current Short Circuit Withstand Time Gate-to-Emitter Voltage Isolation Voltage, any terminal to case, 1 minute Maximum Power Dissipation, each IGBT Maximum Power Dissipation, each IGBT |
600 13 6.8 40 40 6.1 40 ±20 2500 36 14 |
V A µs V VRMS W |
TJ TSTG |
Operating Junction and Storage Temperature Range |
-40 to +150 |
°C |
Soldering Temperature, for 10 sec. Mounting torque, 6-32 or M3 screw. |
300 (0.063 in. (1.6mm) from case) 5-7 lbf•in (0.55 - 0.8 N•m) |