CPV362M4K, CPV362M4U, CPV362M4UPBF Selling Leads, Datasheet
MFG:IR D/C:936
CPV362M4K, CPV362M4U, CPV362M4UPBF Datasheet download
Part Number: CPV362M4K
MFG: IR
Package Cooled:
D/C: 936
MFG:IR D/C:936
CPV362M4K, CPV362M4U, CPV362M4UPBF Datasheet download
MFG: IR
Package Cooled:
D/C: 936
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Datasheet: CPV362M4K
File Size: 334702 KB
Manufacturer: IRF [International Rectifier]
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PDF/DataSheet Download
Datasheet: CPV362M4U
File Size: 280938 KB
Manufacturer: IRF [International Rectifier]
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PDF/DataSheet Download
Datasheet: CPV362M4F
File Size: 288085 KB
Manufacturer:
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The IGBT technology is the key to International Rectifier's advanced line of IMS (Insulated Metal Substrate) Power Modules. These modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET. This superior technology has now been coupled to a state of the art materials system that maximizes power throughput with low thermal resistance. This
package is highly suited to motor drive applications and where space is at a premium.
Parameter | Max. | Units | |
VCES |
Collector-to-Emitter Voltage | 600 | V |
IC @ TC = 25°C | Continuous Collector Current, each IGBT | 5.7 | A |
IC @ TC = 100°C |
Continuous Collector Current, each IGBT | 3.0 | |
ICM |
Pulsed Collector Current | 11 | |
ILM | Clamped Inductive Load Current | 11 | |
IF @ TC = 100°C |
Diode Continuous Forward Current | 3.4 | |
IFM | Diode Maximum Forward Current | 11 | |
tsc | Short Circuit Withstand Time | 10 | s |
VGE |
Gate-to-Emitter Voltage | ± 20 | V |
VISOL |
Isolation Voltage, any terminal to case, 1 minute | 2500 | VRMS |
PD @ TC = 25°C | Maximum Power Dissipation, each IGBT | 23 | W |
PD @ TC = 100°C | Maximum Power Dissipation, each IGBT | 9.1 | |
TJ TSTG |
Operating Junction and Storage Temperature Range |
-40 to +150 | °C |
Soldering Temperature, for 10 sec. |
300 (0.063 in. (1.6mm) from case) | ||
Mounting torque, 6-32 or M3 screw | 5-7 lbf•in (0.55 - 0.8 N•m) |
• Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10s @ 125°C, VGE = 15V
• Fully isolated printed circuit board mount package
• Switching-loss rating includes all "tail" losses
• HEXFREDTM soft ultrafast diodes
• Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve
The IGBT technology is the key to International Rectifier's advanced line of IMS (Insulated Metal Substrate) Power Modules. These modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET. This superior technology has now been coupled to a state of the art materials system that maximizes power throughput with low thermal resistance. This package is highly suited to motor drive applications and where space is at a premium.
Parameter |
Max. |
Units | |
VCES | Collector-to-Emitter Voltage |
600 |
V |
IC @ TC = 25°C | Continuous Collector Current, each IGBT |
7.2 |
A |
IC @ TC = 100°C | Continuous Collector Current, each IGBT |
3.9 | |
ICM | Pulsed Collector Current |
22 | |
ILM |
Clamped Inductive Load Current |
22 | |
IF @ TC = 100°C | Diode Continuous Forward Current |
3.4 | |
IFM | Diode Maximum Forward Current |
22 | |
VGE | Gate-to-Emitter Voltage |
±20 |
V |
VISOL | Isolation Voltage, any terminal to case, 1 minute |
2500 |
VRMS |
PD @ TC = 25°C | Maximum Power Dissipation, each IGBT |
23 |
W |
PD @ TC = 100°C | Maximum Power Dissipation, each IGBT |
9.1 | |
TJ TSTG |
Operating Junction and Storage Temperature Range |
-40 to +150 |
°C |
Soldering Temperature, for 10 sec |
300 (0.063 in. (1.6mm) from case) | ||
Mounting torque, 6-32 or M3 screw. |
5-7 lbf•in (0.55-0.8 N•m) |