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CPV362MU, CPV363M, CPV363M4K/CPV364M4K

Table of contents:
Info of CPV362MU
Info of CPV363M
Info of CPV363M4K/CPV364M4K

CPV362MU, CPV363M, CPV363M4K/CPV364M4K Selling Leads, Datasheet

MFG:IR Package Cooled:N/A D/C:2010+

CPV362MU, CPV363M, CPV363M4K/CPV364M4K Picture

CPV362MU, CPV363M, CPV363M4K/CPV364M4K Datasheet download

Five Points

Part Number: CPV362MU

MFG: IR

Package Cooled: N/A

D/C: 2010+

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CPV362MU General Description

The IGBT technology is the key to International Rectifier's advanced line of IMS (Insulated Metal Substrate) Power Modules. These modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET.

This superior technology has now been coupled to a state of the art materials system that maximizes power throughput with low thermal resistance. This package is highly suited to motor drive applications and where space is at a premium.

CPV362MU Maximum Ratings

	Parameter	Max.	Units
V_CES	Collector-to-Emitter Voltage	600	V
I_C@ T_C = 25	Continuous Collector Current each IGBT	7.2	A
I_C@ T_C = 100	Continuous Collector Currenteach IGBT	3.9	A
I_CM	Pulsed Collector Current	22	A
I_LM	Clamped Inductive Load Current	22	A
I_F @ T_C = 100	Diode Continuous Forward Current	3.4	A
I_FM	Diode Maximum Forward Current	22	A
V_GE	Gate-to-Emitter Voltage	±20	V
V_ISOL	Isolation Voltage, any terminal to case, 1 min	2500	V_RMS
P_D @ T_C = 25	Maximum Power Dissipation, each IGBT	23	W
P_D @ T_C = 100	Maximum Power Dissipation, each IGBT	9.1	W
T_J T_STG	Operating Junction and Storage Temperature Range	-40 to +150
	Soldering Temperature, for 10 sec.	300 (0.063 in. (1.6mm) from case)
	Mounting torque, 6-32 or M3 screw.	5-7 lbf?in ( 0.55-0.8 N?m)

CPV362MU Features

• Fully isolated printed circuit board mount package
• Switching-loss rating includes all "tail" losses
• HEXFRED^TM soft ultrafast diodes
• Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve

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