BFG540/X, BFG540/X T/R, BFG540/X/N43 Selling Leads, Datasheet
MFG:PHILIPS Package Cooled:SOT143 D/C:2008
BFG540/X, BFG540/X T/R, BFG540/X/N43 Datasheet download
Part Number: BFG540/X
MFG: PHILIPS
Package Cooled: SOT143
D/C: 2008
MFG:PHILIPS Package Cooled:SOT143 D/C:2008
BFG540/X, BFG540/X T/R, BFG540/X/N43 Datasheet download
MFG: PHILIPS
Package Cooled: SOT143
D/C: 2008
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Datasheet: BFG540/X
File Size: 135382 KB
Manufacturer: PHILIPS [Philips Semiconductors]
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PDF/DataSheet Download
Datasheet: BFG10
File Size: 76569 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: BFG10
File Size: 76569 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
NPN silicon planar epitaxial transistors, intended for wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, satellite TV tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre-optical systems.
The transistors are mounted in plastic SOT143B and SOT143R packages.
SYMBOL | PARAMETER | CONDITIONS |
MIN. |
TYP. |
MAX. |
UNIT |
VCBO | collector-base voltage | open emitter |
- |
- |
20 |
V |
VCES | collector-emitter voltage | RBE = 0 |
- |
- |
15 |
V |
IC | DC collector current |
- |
- |
120 |
mA | |
Ptot | total power dissipation | Ts 60 °C; note 1 |
- |
- |
400 |
mW |
hFE | DC current gain | IC = 40 mA; VCE = 8 V; Tj = 25 °C |
100 |
120 |
250 |
|
Cre | feedback capacitance | IC = 0; VCE = 8 V; f = 1 MHz |
- |
0.5 |
- |
pF |
fT | transition frequency | IC = 40 mA; VCE = 8 V; f = 1 GHz; Tamb = 25 °C |
- |
9 |
- |
GHz |
GUM | maximum unilateral power gain | IC = 40 mA; VCE = 8 V; f = 900 MHz; Tamb = 25 °C |
- |
18 |
- |
dB |
IC = 40 mA; VCE = 8 V; f = 2 GHz; Tamb = 25 °C |
- |
11 |
- |
dB | ||
|s21|2 | insertion power gain | IC = 40 mA; VCE = 8 V; f = 900 MHz; Tamb = 25 °C |
15 |
16 |
- |
dB |
F | noise figure | Gs = Gopt; IC = 10 mA; VCE = 8 V; f = 900 MHz; Tamb = 25 °C |
- |
1.3 |
1.8 |
dB |
Gs = Gopt; IC = 40 mA; VCE = 8 V; f = 900 MHz; Tamb = 25 °C |
- |
1.9 |
2.4 |
dB | ||
Gs = Gopt; IC = 10 mA; VCE = 8 V; f = 2 GHz; Tamb = 25 °C |
- |
2.1 |
- |
dB |