BFG10W/X, BFG10WX, BFG10X Selling Leads, Datasheet
MFG:Philips Package Cooled:Sot-343 D/C:09+
BFG10W/X, BFG10WX, BFG10X Datasheet download
Part Number: BFG10W/X
MFG: Philips
Package Cooled: Sot-343
D/C: 09+
BFG10W/X, BFG10WX, BFG10X
- Table of contents:
Info of BFG10W/X
Info of BFG10WX
Info of BFG10X
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About BFG10
PDF/DataSheet Download
Datasheet: BFG10
File Size: 76569 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About BFG10
PDF/DataSheet Download
Datasheet: BFG10
File Size: 76569 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About BFG10X
PDF/DataSheet Download
Datasheet: BFG10X
File Size: 59808 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
BFG10X General Description
NPN silicon planar epitaxial transistor encapsulated in a plastic, 4-pin dual-emitter SOT343 package.
BFG10X Maximum Ratings
| SYMBOL | PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
| VCBO | collector-base voltage |
open emitter |
- |
20 |
V |
| VCEO | collector-emitter voltage |
open base |
- |
10 |
V |
| VEBO | emitter-base voltage |
open collector |
- |
2.5 |
V |
| IC | collector current (DC) |
- |
250 |
mA | |
| IC(AV) | average collector current |
- |
250 |
mA | |
| Ptot | total power dissipation |
up to Ts = 102 °C; note 1 |
- |
400 |
mW |
| Tstg | storage temperature |
-65 |
+150 |
°C | |
| Tj | junction temperature |
- |
175 |
°C |
BFG10X Features
· High efficiency
· Small size discrete power amplifier
· 900 MHz and 1.9 GHz operating areas
· Gold metallization ensures excellent reliability.
· Small size discrete power amplifier
· 900 MHz and 1.9 GHz operating areas
· Gold metallization ensures excellent reliability.
BFG10X Typical Application
· Common emitter class-AB operation in hand-held radio equipment up to 1.9 GHz.
BFG10X Connection Diagram
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