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BFG11, BFG11/X, BFG11W/X

Table of contents:
Info of BFG11
Info of BFG11/X
Info of BFG11W/X

BFG11, BFG11/X, BFG11W/X Selling Leads, Datasheet

MFG:PHILIPS D/C:.

BFG11, BFG11/X, BFG11W/X Datasheet download

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Part Number: BFG11

MFG: PHILIPS

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BFG11 General Description

The BFG11 is designed as NPN silicon planar epitaxial transistors encapsulated in a plastic, 4-pin dual-emitter SOT143 package. Its typical applications is common emitter class-AB operation in hand-held radio equipment at 1.9 GHz.

It has five features. The first one is it would have high power gain. The second one is it would have high efficiency. The third one is it would have small size discrete power amplifier. The fourth one is it would hav 1.9 GHz operating area. The fifth one is gold metallization ensures excellent reliability. That are all the main features.

Some limiting values have been concluded into several points as follow. The first one is about its collector-base voltage open emitter which would be max 20V. The second one is about its collector-emitter voltage open base which would be max 8V. The third one is about its emitter-base voltage open collector which would be 2.5V. The fourth one is about its collector current (DC) which would be max 500mA. The fifth one is about its average collector current which would be max 500mA. The sixth one is about its total power dissipation which would be max 400mW. The seventh one is about its storage temperature which would be from -65 to +150°C. The eighth one is about its junction temperature which would be max 175°C. The ninth one is about its thermal resistance from junction to soldering point which would be 290K/W.

Also some characteristics about it. The first one is about its collector-base breakdown voltage which would be min 20V. The second one is about its collector-emitter breakdown voltage which would be min 8V. The third one is about its emitter-base breakdown voltage which would be min 2.5V. The fourth one is about its collector cut-off current which would be max 100mA. The fifth one is about its DC current gain which would be min 25. The sixth one is about its collector capacitance which would be max 4pF. The seventh one is about its feedback capacitance which would be max 3pF. And so on. For more information please contact us.

BFG11 Maximum Ratings

BFG11 Features

BFG11/X General Description

NPN silicon planar epitaxial transistors encapsulated in a plastic, 4-pin dual-emitter SOT143 package.

BFG11/X Maximum Ratings

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
V_CBO	collector-base voltage	open emitter	-	20	V
V_CEO	collector-emitter voltage	open base	-	8	V
V_EBO	emitter-base voltage	open collector	-	2.5	V
I_C	collector current (DC)		-	500	mA
IC(AV)	average collector current			500
P_tot	total power dissipation	up to T_s = 60 °C; note 1; see Fig.2	-	400	mW
T_stg	storage temperature		-65	+150	°C
T_j	junction temperature		-	175	°C

Note to the "Limiting values" and "Thermal characteristics"
1. T_s is the temperature at the soldering point of the collector pin.

BFG11/X Features

· High power gain
· High efficiency
· Small size discrete power amplifier
· 1.9 GHz operating area
· Gold metallization ensures excellent reliability.

BFG11/X Typical Application

· Common emitter class-AB operation in hand-held radio equipment at 1.9 GHz.

BFG11/X Connection Diagram

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