BFG10, BFG10/X, BFG10W Selling Leads, Datasheet
MFG:PHI Package Cooled:SOT-143 D/C:05+
BFG10, BFG10/X, BFG10W Datasheet download
Part Number: BFG10
MFG: PHI
Package Cooled: SOT-143
D/C: 05+
BFG10, BFG10/X, BFG10W
- Table of contents:
Info of BFG10
Info of BFG10/X
Info of BFG10W
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About BFG10
PDF/DataSheet Download
Datasheet: BFG10
File Size: 76569 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About BFG10/X
PDF/DataSheet Download
Datasheet: BFG10/X
File Size: 76569 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About BFG10W
PDF/DataSheet Download
Datasheet: BFG10W
File Size: 59808 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
BFG10 General Description
NPN silicon planar epitaxial transistor encapsulated in plastic, 4-pin dual-emitter SOT143 package.
BFG10 Maximum Ratings
| SYMBOL | PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
| VCBO | collector-base voltage |
open emitter |
- |
20 |
V |
| VCEO | collector-emitter voltage |
open base |
- |
8 |
V |
| VEBO | emitter-base voltage |
open collector |
- |
2.5 |
V |
| IC | collector current (DC) |
- |
250 |
mA | |
| IC(AV) | average collector current |
- |
250 |
mA | |
| Ptot | total power dissipation |
up to Ts = 60 °C; see Fig.2; note 1 |
- |
400 |
mW |
| Tstg | storage temperature |
-65 |
+150 |
°C | |
| Tj | junction temperature |
- |
175 |
°C |
Note
1. Ts is the temperature at the soldering point of the collector pin.
BFG10 Features
· High power gain
· High efficiency
· Small size discrete power amplifier
· 1.9 GHz operating area
· Gold metallization ensures excellent reliability.
· High efficiency
· Small size discrete power amplifier
· 1.9 GHz operating area
· Gold metallization ensures excellent reliability.
BFG10 Typical Application
· Common emitter class-AB operation in hand-held radio equipment at 1.9 GHz.
BFG10 Connection Diagram
BFG10/X General Description
NPN silicon planar epitaxial transistor encapsulated in plastic, 4-pin dual-emitter SOT143 package.
BFG10/X Maximum Ratings
| SYMBOL | PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
| VCBO | collector-base voltage |
open emitter |
- |
20 |
V |
| VCEO | collector-emitter voltage |
open base |
- |
8 |
V |
| VEBO | emitter-base voltage |
open collector |
- |
2.5 |
V |
| IC | collector current (DC) |
- |
250 |
mA | |
| IC(AV) | average collector current |
- |
250 |
mA | |
| Ptot | total power dissipation |
up to Ts = 60 °C; see Fig.2; note 1 |
- |
400 |
mW |
| Tstg | storage temperature |
-65 |
+150 |
°C | |
| Tj | junction temperature |
- |
175 |
°C |
Note
1. Ts is the temperature at the soldering point of the collector pin.
BFG10/X Features
· High power gain
· High efficiency
· Small size discrete power amplifier
· 1.9 GHz operating area
· Gold metallization ensures excellent reliability.
· High efficiency
· Small size discrete power amplifier
· 1.9 GHz operating area
· Gold metallization ensures excellent reliability.
BFG10/X Typical Application
· Common emitter class-AB operation in hand-held radio equipment at 1.9 GHz.
BFG10/X Connection Diagram
BFG10W General Description
NPN silicon planar epitaxial transistor encapsulated in a plastic, 4-pin dual-emitter SOT343 package.
BFG10W Maximum Ratings
| SYMBOL | PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
| VCBO | collector-base voltage |
open emitter |
- |
20 |
V |
| VCEO | collector-emitter voltage |
open base |
- |
10 |
V |
| VEBO | emitter-base voltage |
open collector |
- |
2.5 |
V |
| IC | collector current (DC) |
- |
250 |
mA | |
| IC(AV) | average collector current |
- |
250 |
mA | |
| Ptot | total power dissipation |
up to Ts = 102 °C; note 1 |
- |
400 |
mW |
| Tstg | storage temperature |
-65 |
+150 |
°C | |
| Tj | junction temperature |
- |
175 |
°C |
BFG10W Features
· High efficiency
· Small size discrete power amplifier
· 900 MHz and 1.9 GHz operating areas
· Gold metallization ensures excellent reliability.
· Small size discrete power amplifier
· 900 MHz and 1.9 GHz operating areas
· Gold metallization ensures excellent reliability.
BFG10W Typical Application
· Common emitter class-AB operation in hand-held radio equipment up to 1.9 GHz.
BFG10W Connection Diagram
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