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A large area high sensitivity NPN silicon phototransistor VTT1116 in a lensed, hermetically sealed, TO-46 package. The hermetic package offers superior protection from hostile environments The base connection is brought ...
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Large area high sensitivity NPN silicon phototransistor VTT1115(H) in a lensed, hermetically sealed, TO-46 package. The hermetic package offers superior protection from hostile environments The base connection is brought...
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A large area high sensitivity NPN silicon phototransistor VTT1115 in a lensed, hermetically sealed, TO-46 package. The hermetic package offers superior protection from hostile environments The base connection is brought ...
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VTT1031 A very large area high sensitivity NPN silicn phototransistor in a flat lensed,hermetically sealed,TO-46 package.The hermetic package offers superior protection from hostile environments.The base connection is br...
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VTT1017(H) Large area high sensitivity NPN silicon phototransistor in a flat lensed, hermetically sealed, TO-46 package. The hermetic package offers superior protection from hostile environments. The base connection is b...
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VTT1017 A large area high sensitivity NPN silicon phototransistor in a flat lensed, hermetically sealed, TO-46 package. The hermetic package offers superior protection from hostile environments. The base connection is br...
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VTT1016(H) Large area high sensitivity NPN silicon phototransistor in a flat lensed, hermetically sealed, TO-46 package. The hermetic package offers superior protection from hostile environments. The base connection is b...
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VTT1016 A large area high sensitivity NPN silicon phototransistor in a flat lensed, hermetically sealed, TO-46 package. The hermetic package offers superior protection from hostile environments. The base connection is br...
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VTT1015(H) Large area high sensitivity NPN silicon phototransistor in a flat lensed, hermetically sealed, TO-46 package. The hermetic package offers superior protection from hostile environments. The base connection is b...
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VTT1015 A large area high sensitivity NPN silicon phototransistor in a flat lensed, hermetically sealed, TO-46 package. The hermetic package offers superior protection from hostile environments. The base connection is br...
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VTT0942 A medium area high speed NPN silicon phototransistor in a lensed, hermetically sealed, low cost TO-18 package.The hermetic package offers superior protection from hostile environments.The base connection is broug...
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VTT0842 A medium area high speed NPN silicon phototransistor in a lensed, hermetically sealed, low cost TO-18 package.The hermetic package offers superior protection from hostile environments.The base connection is broug...
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The VTST-Series of Single-Conversion Electronic Television tuners provide a new, smaller size and lower cost interface for NTSC and PAL applications. These tuners provide a common package size, which is the smallest in t...
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If your design calls for the elimination of transmission line effects on high speed data lines Vishay Thin Film's integrated RC network, schematic AB is the answer. The VTSRC20 planar design of our single die thin film n...
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VTSRC, VSSRC, VSORC-AD 25 or 50 Mil Pitch, T-Filter Resistor/Capacitor Networks
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VTSRC, VSSRC, VSORC-AC 25 or 50 Mil Pitch, Termination Resistor/Capacitor Networks
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VTSRC, VSSRC, VSORC-AB 25 or 50 Mil Pitch, Termination Resistor/Capacitor Networks
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VTSRC, VSSRC, VSORC-AA 25 or 50 Mil Pitch, T-Filter Resistor/Capacitor Networks
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VTSR, VSSR, VSOR Molded, 25 or 50 Mil Pitch, Dual-In-Line Resistor Networks
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This VTS85 planar, P on N, large area silicon photodiodes is characterized for use in the photovoltaic (unbiased) mode. Their excellent speed and broadband sensitivity makes them ideal for detecting light from a variety ...
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This VTS-84 planar, P on N, large area silicon photodiodes is characterized for use in the photovoltaic (unbiased) mode. Their excellent speed and broadband sensitivity makes them ideal for detecting light from a variety...
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This VTS-83 planar, P on N, large area silicon photodiodes is characterized for use in the photovoltaic (unbiased) mode. Their excellent speed and broadband sensitivity makes them ideal for detecting light from a variety...
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This VTS82 planar, P on N, large area silicon photodiodes is characterized for use in the photovoltaic (unbiased) mode. Their excellent speed and broadband sensitivity makes them ideal for detecting light from a variety ...
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This VTS-81 planar, P on N, large area silicon photodiodes is characterized for use in the photovoltaic (unbiased) mode. Their excellent speed and broadband sensitivity makes them ideal for detecting light from a variety...
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This VTS80 planar, P on N, large area silicon photodiodes is characterized for use in the photovoltaic (unbiased) mode. Their excellent speed and broadband sensitivity makes them ideal for detecting light from a variety ...
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VTS-70 large area planar silicon photodiodes primarily inteded for use in the photovoltatic mode.These devices have excellent response in the UV region and are designed for high output down to 220 nm.The cells have moder...
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VTS-24 large area planar silicon photodiodes primarily inteded for use in the photovoltatic mode.These devices have low series resistance, moderate shunt resistance and high open circuit voltage at nominal light levels f...
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The VTS-11 P on N large area silicon diodes is primarily inteded for use in the photovoltaic mode.These devices have good response over the visible and IR regions.They have low sereis resistance, moderate shunt resistanc...
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VTS__94 Large area planar silicon photodiodes suitable for use in the photovoltatic mode, but use in the photovoltatic mode, but may be used with a small reverse bias.The low capacitance of these units permmits fast resp...
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VTS__91 Large area planar silicon photodiodes suitable for use in the photovoltatic mode, but use in the photovoltatic mode, but may be used with a small reverse bias.The low capacitance of these units permmits fast resp...
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VTS__86 Large area planar silicon photodiodes suitable for use in the photovoltatic mode, but use in the photovoltatic mode, but may be used with a small reverse bias.The low capacitance of these units permmits fast resp...
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VTS__76 large area planar silicon photodiodes primarily inteded for use in the photovoltatic mode.These devices have excellent response in the UV region and are designed for high output down to 220 nm.The cells have mode...
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VTS__73 large area planar silicon photodiodes primarily inteded for use in the photovoltatic mode.These devices have excellent response in the UV region and are designed for high output down to 220 nm.The cells have mode...
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VTS__66 Five cell arrays of large area planar silicon photodiodes primarily inteded for use in the photovoltaic mode.These devices have low series resistance, moderate shunt resistance and high open circuit voltage at no...
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VTS__64 Five cell arrays of large area planar silicon photodiodes primarily inteded for use in the photovoltaic mode.These devices have low series resistance, moderate shunt resistance and high open circuit voltage at no...
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VTS__62 Three cell arrays of large area planar silicon photodiodes primarily inteded for use in the photovoltaic mode.These devices have low series resistance, moderate shunt resistance and high open circuit voltage at n...
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VTS__60 large area planar silicon photodiodes primarily inteded for use in the photovoltatic mode.These devices have low series resistance, moderate shunt resistance and high open circuit voltage at nominal light levels ...
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VTS__22 large area planar silicon photodiodes primarily inteded for use in the photovoltatic mode.These devices have low series resistance, moderate shunt resistance and high open circuit voltage at nominal light levels ...
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VTS__14 large area planar silicon photodiodes primarily inteded for use in the photovoltatic mode.These devices have low series resistance, moderate shunt resistance and high open circuit voltage at nominal light levels ...
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VTS__13 large area planar silicon photodiodes primarily inteded for use in the photovoltatic mode.These devices have low series resistance, moderate shunt resistance and high open circuit voltage at nominal light levels ...
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VTS__11 large area planar silicon photodiodes primarily inteded for use in the photovoltatic mode.These devices have low series resistance, moderate shunt resistance and high open circuit voltage at nominal light levels ...
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Vishay Transducers' VTRD10 is a compact, digit-for-digit, high visibility remote display.The large LED display (57mm digits) and wide viewing angle contribute to ease of reading at long distances.The VTRD10 is environmen...
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This VTR24F1(H) retro-reflective sensor combines an infrared emitting diode and a unique photodarlington output to provide high sensitivity while rejecting ambient light. It has a very long sensing range (up to 4 inches)...
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This VTR24F1 retro-reflective sensor combines an infrared emitting diode and a unique photodarlington output to provide high sensitivity while rejecting ambient light. It has a very long sensing range (up to 4 inches) co...
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This series of reflective optical switches combines an infrared emitting diode (IRED) with an NPN phototransistor (VTR16D1) in a one piece, sealed, IR transmitting plastic case. The sealed construction improves resistanc...
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This series of reflective type optical switches combines a GaAs LED with an NPN phototransistor in a one piece sealed IR transmitting plastic case.Debris and moisture cannot degrade operation.Units are available with P.C...
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This 16 element photodiode array is specifically designd for use in the photovoltaic mode.The anode of each diode is connectd directly to a case terminal.The array os mounted on a ceramic header with a thin coating of cl...
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VTP9412 Small area planar silicon photodiode in a recessed ceramic package. Chip is coated with a protective layer of clear epoxy. These diodes exhibit low dark current under reverse bias and fast speed of response.
Mfg:PERKINELMER Pack:2 Vendor:Other Category:Other
VTP9412 Small area planar silicon photodiode in a recessed ceramic package. Chip is coated with a protective layer of clear epoxy. These diodes exhibit low dark current under reverse bias and fast speed of response.
Mfg:PERKINELMER Pack:DIP Vendor:Other Category:Other
VTP8651 Planar silicon photodiode in a molded plastic, infrared transmitting package. Suitable for direct mounting to P.C.B. Arrays can be formed by positioning devices side by side. These diodes exhibit low dark current...
Mfg:PERKINELMER Pack:DIP Vendor:Other Category:Other
VTP8551 Planar silicon photodiode in a transparent molded plastic package. Suitable for direct mounting to P.C.B. Arrays can be formed by positioning these devices side by side. These diodes exhibit low dark current unde...
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VTP8440(H) Planar silicon photodiode in a recessed ceramic package. Chip is coated with a protective layer of clear epoxy. These diodes exhibit low dark current under reverse bias and fast speed of response.
Mfg:PERKINELMER Pack:DIP D/C:08+ Vendor:Other Category:Other
VTP8440 Planar silicon photodiode in a recessed ceramic package. Chip is coated with a protective layer of clear epoxy. These diodes exhibit low dark current under reverse bias and fast speed of response.
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VTP8350 Planar silicon photodiode mounted on a two lead ceramic substrate and coated with a thick layer of clear epoxy. These diodes exhibit low dark current under reverse bias and fast speed of response.
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VTP7840(H) Planar silicon photodiode in a transfer molded, large lensed sidelooker package. The dark package material filters out visible light but passes infrared. These diodes exhibit low dark current under reverse bia...
Mfg:PERKINELMER Pack:DIP D/C:08+ Vendor:Other Category:Other
VTP7840 Planar silicon photodiode in a transfer molded, large lensed sidelooker package. The dark package material filters out visible light but passes infrared. These diodes exhibit low dark current under reverse bias a...
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VTP7210(H) Small area planar silicon photodiode in a lensed sidelooking package. The package material filters out visible light but passes infrared. These diodes exhibit low dark current under reverse bias and fast speed...
Mfg:PERKINELMER Pack:DIP D/C:08+ Vendor:Other Category:Other
VTP7210 Small area planar silicon photodiode in a lensed sidelooking package. The package material filters out visible light but passes infrared. These diodes exhibit low dark current under reverse bias and fast speed of...
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VTP7110(H) Small area planar silicon photodiode in a clear, lensed sidelooking package. These diodes exhibit low dark current under reverse bias and fast speed of response.
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VTP7110 Small area planar silicon photodiode in a clear, lensed sidelooking package. These diodes exhibit low dark current under reverse bias and fast speed of response.
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VTP6060 Large area planar silicon photodiode in a "flat" window, dual lead TO-8 package. Cathode is common to the case. These diodes exhibit low dark current under reverse bias and fast speed of response.
Large area pla...
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VTP5050(H) Planar silicon photodiode in a "flat" window, dual lead TO-5 package. Cathode is common to the case. These diodes exhibit low dark current under reverse bias and fast speed of response.
Mfg:PERKINELMER Pack:DIP D/C:08+ Vendor:Other Category:Other
VTP5050 Planar silicon photodiode in a "flat" window, dual lead TO-5 package. Cathode is common to the case. These diodes exhibit low dark current under reverse bias and fast speed of response.
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VTP485S Large area planar silicon mounted on a two lead ceramic substrate and coated with a layer of clear epoxy. Low junction capacitance permits fast response time.
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VTP4085S Large area planar silicon mounted on a two lead ceramic substrate and coated with a layer of clear epoxy. Low junction capacitance permits fast response time.
Mfg:PERKINELMER Pack:DIP D/C:08+ Vendor:Other Category:Other
VTP4085 Large area planar silicon mounted on a two lead ceramic substrate and coated with a layer of clear epoxy. Low junction capacitance permits fast response time.
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VTP3410LA(H) Small area planar silicon photodiode in a long T-1, endlooking package. The package material is infrared transmitting (blocking visible light). These diodes exhibit low dark current under reverse bias and fa...
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VTP3410LA Small area planar silicon photodiode in a long T- 1, endlooking package. The package material is infrared transmitting (blocking visible light). These diodes exhibit low dark current under reverse bias and fast...
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VTP3310LA(H) Small area planar silicon photodiode in a clear, long T-1, endlooking package. These diodes exhibit low dark current under reverse bias and fast speed of response.
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VTP3310LA Small area planar silicon photodiode in a clear, long T-1, endlooking package. These diodes exhibit low dark current under reverse bias and fast speed of response.
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This VTP1332F photodiode features the largest detection area available in a clear, endlooking, flat lens, T-1? package. The package material is infrared transmitting (blocking visible light). Combined with excellent dark...
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This VTP1332 photodiode features the largest detection area available in a clear, endlooking T-1? package. The package material is infrared transmitting (blocking visible light). Combined with excellent dark current, it ...
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This VTP1232F photodiode features the largest detection area available in a clear, endlooking, flat lens,T-1? package. Combined with excellent dark current, it can fulfill the demands of many difficult applications.
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This photodiode VTP1232(H) features the largest detection area available in a clear, endlooking T-1? package. Combined with excellent dark current, it can fulfill the demands of many difficult applications.
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This VTP1232 photodiode features the largest detection area available in a clear, endlooking T-1¾ package. Combined with excellent dark current, it can fulfill the demands of many difficult applications.
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IR Blocking Silicon PhotodiodeThis VTP1220FB(H) processed P on N planar silicon photodiode is housed in a clear, T-1 3/4 flat end-looking package.These diodes contain an integral IR rejection filter, offering good visual...
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This VTP1220FB processed P on N planar silicon photodiode is housed in a clear, T-1 3⁄4 flat end-looking package.These diodes contain an integral IR rejection filter, offering good visual response.The spectral resp...
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VTP1188S(H) Large area planar silicon photodiode mounted on a two lead ceramic substrate. A clear molded lens is used to increase sensitivity. Low junction capacitance permits fast response time.
Mfg:PERKINELMER Pack:DIP D/C:2 Vendor:Other Category:Other
VTP1188S Large area planar silicon photodiode mounted on a two lead ceramic substrate. A clear molded lens is used to increase sensitivity. Low junction capacitance permits fast response time.
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VTP1112(H) Small area planar silicon photodiode in a lensed. dual lead TO-46 package. Cathode is common to the case. These diodes exhibit low dark current under reverse bias and fast speed of response.
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VTP1112 Small area planar silicon photodiode in a lensed. dual lead TO-46 package. Cathode is common to the case. These diodes exhibit low dark current under reverse bias and fast speed of response.
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VTP1012(H) Small area planar silicon photodiode in a "flat" window TO-46 package. Cathode is common to the case. These diodes exhibit low dark current under reverse bias and fast speed of response.
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VTP1012 Small area planar silicon photodiode in a "flat" window TO-46 package. Cathode is common to the case. These diodes exhibit low dark current under reverse bias and fast speed of response.
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VTP100C(H) Planar silicon photodiode in a molded plastic sidelooker package. The package material is clear. These diodes exhibit low dark current and fast speed of response.
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VTP100C Planar silicon photodiode in a molded plastic sidelooker package. The package material is clear. These diodes exhibit low dark current and fast speed of response.
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VTP100(H) Planar silicon photodiode in a molded plastic sidelooker package. The package material is infrared transmitting (blocking visible light). These diodes exhibit low dark current and fast speed of response.
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VTP100 Planar silicon photodiode in a molded plastic sidelooker package. The package material is infrared transmitting (blocking visible light). These diodes exhibit low dark current and fast speed of response.
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HP VTO-9000 Hyperabrupt Series oscillators use a silicon transistor chip as a negative resistance oscillator. The oscillation frequency is determined by a silicon hyperabrupt varactor diode acting as a voltage-variable c...
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The VTO-8951 provides a fundamental, low jitter source as a key component for the data re-timing in the transmitter subsystem and clock and data recovery in the receiver of the 10 Gb fiber optic systems.The oscillator us...
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HP VTO-8000 Series oscillators use a silicon transistor chip as a negative resistance oscillator. The oscillation frequency is determined by a silicon abrupt varactor diode acting as a voltage-variable capacitor in a thi...
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The VTO-3981-K and VTO-4301-K provide a fundamental, low jitter source as a key component for the data re-timing in the transmitter subsystem and clock and data recovery in the receiver of the 40 Gb fiber optic systems.T...
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The VTO-3981-K and VTO-4301-K provide a fundamental, low jitter source as a key component for the data re-timing in the transmitter subsystem and clock and data recovery in the receiver of the 40 Gb fiber optic systems.T...
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The VTO-1990-SMA and VTO-2150-SMA provides a fundamental, low jitter source as a key component for the data re-timing in the transmitter subsystem and clock and data recovery in the receiver of the 40 Gb fiber optic syst...
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The VTO-1990-SMA and VTO-2150-SMA provides a fundamental, low jitter source as a key component for the data re-timing in the transmitter subsystem and clock and data recovery in the receiver of the 40 Gb fiber optic syst...
Mfg:500 Pack:IXYS Vendor:Other Category:Other
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