VTT0842

VTT0842 A medium area high speed NPN silicon phototransistor in a lensed, hermetically sealed, low cost TO-18 package.The hermetic package offers superior protection from hostile environments.The base connection is brought out allowing conventional transistor biasing.These devices are spectrally and mechanically matched to the VTE11xx series of IREDs.

The absolute maximum ratings and elelctro-optical specifications of VTT0842 can be summerized as:(1): storage temperature is -55 to 125; (2): operating temperature is -55 to 125; (3): short circuit current(Isc) is 320 uA min,420 uA typ when H is 100fc, 2850K; (4): Isc temp.coefficient(TC Isc) is 0.20%/ typ(2850K); (5): lead soldering temperature is 260; (6): continuous power dissipation is 250 mW; (7): maximum current is 50 mA; (8): lead soldering temperature is 260(1.6 mm from case, 5 sec, max); (9): collector breakdown(VBR(ceo)) is 50 V min when Ic is 100 uA, H is 0; (10): saturation voltage(VCE(sat)) is 0.25 V max when Ic is 2.0 mA and IB is 50 uA; (11): rise/fall time(tR/tF) is 6 usec typ .

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