VTS__66

VTS__66 Five cell arrays of large area planar silicon photodiodes primarily inteded for use in the photovoltaic mode.These devices have low series resistance, moderate shunt resistance and high open circuit voltage at norminal light levels for use in power conversion and battery charging applications. Cells have solderable contacts and are available with or without flexible flying leads. Deviices with leads are acrylic(plastic) coated.

The absolute maximum ratings and elelctro-optical specifications of VTS__66 can be summerized as:(1): storage temperature is -40 to 150(series 20,31) or is -40 to 105(series 30); (2): operating temperature is -40 to 125(series 20,31) or is -40 to 105(series 30); (3): short circuit current(Isc) is 0.54 mA min when H is 100fc, 2850K; (4): Isc temp.coefficient(TC Isc) is 0.20%/ typ(2850K); (5): open circuit voltage(Voc) is 2.25 V typ(H is 100 fc, 2850K); (7): Voc temp.coefficent(TC Voc)  is -10%/ typ (2850K); (8): junction capacitance(Cj) is 4.6 nF typ when H is 0 V and V is 0 V; (9): spectral response-peak is 875 nm typ; (11): sensitivity(SR) is 0.51 A/W at peak.

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