DescriptionThis 16 element photodiode array is specifically designd for use in the photovoltaic mode.The anode of each diode is connectd directly to a case terminal.The array os mounted on a ceramic header with a thin coating of clear epoxy. Features of VTP9710 are: (1)16 element array; (2)common...
VTP9710: DescriptionThis 16 element photodiode array is specifically designd for use in the photovoltaic mode.The anode of each diode is connectd directly to a case terminal.The array os mounted on a ceramic...
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DescriptionVTP9412 Small area planar silicon photodiode in a recessed ceramic package. Chip is coa...
This 16 element photodiode array is specifically designd for use in the photovoltaic mode.The anode of each diode is connectd directly to a case terminal.The array os mounted on a ceramic header with a thin coating of clear epoxy.
Features of VTP9710 are: (1)16 element array; (2)common cathode; (3)low dark current; (4)photovoltaic operation; (5)high shunt resistance; (6)low capacitance.
The absolute maximum rating and electro-optical characteristics of VTP9710(1): storage temperature range is -20 to +80; (2): operating temperature range is -10 to +70; (3): lead soldering temperature is 260(1.6 mm from case, 5 sec.max); (4): light current(IL) is 60 uA typ(Ee is 100 fc,2850K, Vbias is 0 V); (5): spectral response is 940 nm typ(peak) or is 450 nm min and 1100 nm max(range); (6): shunt resistance at Vbias is -10 mV(RD) is 2000 M ohms; (7): leakage current at Vbias is -10 V(ID) is 5 nA typ and 25 nA max; (8): capacitance at Vbias is 0 V (Cj) is 175 pF max.