VTS__22

VTS__22 large area planar silicon photodiodes primarily inteded for use in the photovoltatic mode.These devices have low series resistance, moderate shunt resistance and high open circuit voltage at nominal light levels for use in power conversion and battery charging applications.Cells have solderable contacts and are available with or without flexible flying leads.Devices with leads are acrylic(plastic) coated.

The absolute maximum ratings and elelctro-optical specifications of VTS__22 can be summerized as:(1): storage temperature is -40 to 150(series 20,31) or is -40 to 105(series 30); (2): operating temperature is -40 to 125(series 20,31) or is -40 to 105(series 30); (3): short circuit current(Isc) is 0.580 mA min when H is 100fc, 2850K; (4): Isc temp.coefficient(TC Isc) is 0.20%/ typ(2850K); (5): open circuit voltage(Voc) is 0.45 V typ(H is 100 fc, 2850K); (7): Voc temp.coefficent(TC Voc)  is -2.0 mV/ typ (2850K); (8): dark current(ID) is 2.0 uA typ and 50 uA max(H is 0 , VR is 500 mV); (9): shunt resistance(RSH) is 0.11 M ohms typ(H is 0, V is 10 mV); (10): spectral application range is 400 nm min and 1050 nm max; (11): sensitivity(SR) is 0.51 A/W at peak.

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