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VTT1017

SpecificationsMaximum TemperaturesStorage Temperature: .......................-40°C to 110°COperating Temperature:.................... -40°C to 110°CContinuous Power Dissipation: ......................100mWDerate above 30°C: ...............................3.12 mW/°CMaximum Current:...................

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SeekIC No. : 004544117 Detail

VTT1017: SpecificationsMaximum TemperaturesStorage Temperature: .......................-40°C to 110°COperating Temperature:.................... -40°C to 110°CContinuous Power Dissipation: ......................

VTT1017 Data Sheet

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Part Number:
VTT1017
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/24

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Product Details

Description



Specifications

Maximum Temperatures
Storage Temperature: .......................-40°C to 110°C
Operating Temperature:.................... -40°C to 110°C
Continuous Power Dissipation: ......................100mW
Derate above 30°C: ...............................3.12 mW/°C
Maximum Current:.......................................... 200 mA
Lead Soldering Temperature:.......................... 260°C
(1.6 mm from case, 5 sec. max.)  


Description

VTT1017 A large area high sensitivity NPN silicon phototransistor in a flat lensed, hermetically sealed, TO-46 package. The hermetic package offers superior protection from hostile environments. The base connection is brought out allowing conventional transistor biasing. These devices are spectrally matched to the VTE10xx series of IREDs.




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