VTT1031

VTT1031 A very large area high sensitivity NPN silicn phototransistor in a flat lensed,hermetically sealed,TO-46 package.The hermetic package offers superior protection from hostile environments.The base connection is brought out allowing converntional transistor biasing.These devices are spectrally and mechanically matched to the VTE10xx series of IREDs.

The absolute maximum ratings and elelctro-optical specifications of VTT1031 can be summerized as:(1): storage temperature is -40 to 110; (2): operating temperature is -40 to 110; (3): continuous power dissipation is 250 mW; (4): maximum current is 200 mA; (5): lead soldering temperature is 260; (6): collector breakdown(VBR(ceo)) is 40 V min when Ic is 100 uA and H is 0; (7): emitter breakdown(VBR(ceo)) is 5.0 V min when IE is 100 uA and H is 0; (8): saturation voltage(VCE(sat)) is 0.40 V max when Ic is 1.0 mA and H is 400 fc.

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