VTS-70

VTS-70 large area planar silicon photodiodes primarily inteded for use in the photovoltatic mode.These devices have excellent response in the UV region and are designed for high output down to 220 nm.The cells have moderate shunt resistance and are optimized for use at lower light levels.These diodes have solderable contacts and are available with or without flexible leads.Device with leads are acrylic(plastic) coated.

The absolute maximum ratings and elelctro-optical specifications of VTS-70 can be summerized as:(1): storage temperature is -40 to 150(series 20,31) or is -40 to 105(series 30); (2): operating temperature is -40 to 125(series 20,31) or is -40 to 105(series 30); (3): short circuit current(Isc) is 0.24 mA min and 0.275 uA max when H is 100fc, 2850K; (4): Isc temp.coefficient(TC Isc) is 0.18%/ typ(2850K); (5): open circuit voltage(Voc) is 0.20 V typ(H is 100 fc, 2850K); (7): Voc temp.coefficent(TC Voc)  is -6%/ typ (2850K); (8): junction capacitance(Cj) is 3.4 nF typ when H is 0 V and V is 0 V; (9): spectral response-peak is 875 nm typ; (11): sensitivity(SR) is 0.50 A/W at peak.

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