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Mfg:NIEC Pack:TO-263 D/C:04+ Vendor:Other Category:Other
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Multi-Element silicon avalanche photodiode made using a double-diffused ''reach-through'' structure. C30985E structure provides high responsivity up to 1060 nm as well as fast rise and fall times at all wavelengths. Feat...
Vendor:Other Category:Other
General purpose silicon avalanche photodiode C30956EH made using a double-diffused "reach-through" structure. This photodiode C30956EH is designed such that it's long wave response (>900 nm) has been enhanced without ...
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General purpose silicon avalanche photodiode C30956E made using a double-diffused "reach-through" structure. This photodiode C30956E is designed such that it's long wave response (>900 nm) has been enhanced without in...
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General purpose silicon avalanche photodiode made using a double-diffused "reach-through" structure. This photodiode C30955EH is designed such that it's long wave response (>900 nm) has been enhanced without introduci...
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General purpose silicon avalanche photodiode C30955E made using a double-diffused "reach-through" structure. This photodiode C30955E is designed such that it's long wave response (>900 nm) has been enhanced without in...
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General purpose silicon avalanche photodiode C30954EH made using a double-diffused "reach-through" structure. C30954EH photodiode is designed such that it's long wave response (>900 nm) has been enhanced without intro...
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General purpose silicon avalanche photodiode made using a double-diffused "reach-through" structure. C30954E photodiode is designed such that it's long wave response (>900 nm) has been enhanced without introducing any...
Pack:CAN12 Vendor:Other Category:Other
Si PIN Modules - High Bandwidth - 40MHz to 100MHz The C30950 uses bipolar amps.
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Quadrant silicon photodiodes C30927E-03 made using a double-diffused ''reach-through'' structure. The quadrant structure has a common avalanche junction, with separation of the quadrants achieved by segmentation of the l...
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Quadrant silicon photodiodes C30927E-02 made using a double-diffused ''reach-through'' structure. The quadrant structure has a common avalanche junction, with separation of the quadrants achieved by segmentation of the l...
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Quadrant silicon photodiodes C30927E-01 made using a double-diffused ''reach-through'' structure. The quadrant structure has a common avalanche junction, with separation of the quadrants achieved by segmentation of the l...
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PerkinElmer Type C30902E avalanche photodiode utilizes a silicon detector chip fabricated with a double-diffused "reachthrough" structure. This structure provides high responsivity between 400 and 1000 nm as well as extr...
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PerkinElmer Type C30902E avalanche photodiode utilizes a silicon detector chip fabricated with a double-diffused "reachthrough" structure. C30921E structure provides high responsivity between 400 and 1000 nm as well as e...
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Si PIN Modules - High Bandwidth - 40 MHz to 100 MHz The C30919E use biopolar amps.
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RCA development type C30904E is silicon avalanche photodiodes containing a light pipe which is an integral part of the package. These avalche photodiodes are made using a double-diffused "reach through"structure. This st...
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The C30902S-TC APD comes with a 1-stage thermo-electric cooler. Cooling the APD reduces the thermal noise for very-small signal detection. A TE cooler can be used to maintain a constant APD temperature and thus keep the ...
Vendor:Other Category:Other
The C30902SH-TC APD comes with a 1-stage thermo-electric cooler. Cooling the APD reduces the thermal noise for very-small signal detection. A TE cooler can be used to maintain a constant APD temperature and thus keep the...
Vendor:Other Category:Other
The C30902SH-DTC APD comes with a 2-stage thermo-electric cooler. Cooling the APD reduces the thermal noise for very-small signal detection. A TE cooler can be used to maintain a constant APD temperature and thus keep th...
Vendor:Other Category:Other
The C30902S-DTC APD comes with a 2-stage thermo-electric cooler. Cooling the APD reduces the thermal noise for very-small signal detection. A TE cooler can be used to maintain a constant APD temperature and thus keep the...
Vendor:Other Category:Other
PerkinElmer Type C30902E avalanche photodiode utilizes a silicon detector chip fabricated with a double-diffused "reachthrough" structure. This structure provides high responsivity between 400 and 1000 nm as well as extr...
Vendor:Other Category:Other
PerkinElmer Type C30902E avalanche photodiode utilizes a silicon detector chip fabricated with a double-diffused "reachthrough" structure. This structure provides high responsivity between 400 and 1000 nm as well as extr...
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The C3088 is a 1/4" color camera module with digital output. It uses OmniVision's CMOS image sensor OV6620. Combining CMOS technology together with an easy to use digital interface makes C3088 a low cost solution for hig...
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This family of N-type silicon p-i-n photodiodes C30831 is designed for use in a wide variety of broad band low light level applications covering the spectral range from below 400 to over 1100 nm.The different types maki...
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This C30822 family of N-type silicon p-i-n photodiodes is designed for use in a wide variety of broad band low light level applications covering the spectral range from below 400 to over 1100 nm.The different types makin...
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This family of N-type silicon p-i-n photodiodesC30810 is designed for use in a wide variety of broad band low light level applications covering the spectral range from below 400 to over 1100 nm.The different types makin...
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This family of N-type silicon p-i-n photodiodes C30809 is designed for use in a wide variety of broad band low light level applications covering the spectral range from below 400 to over 1100 nm.The different types makin...
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This family of N-type silicon p-i-n photodiodes C30808 is designed for use in a wide variety of broad band low light level applications covering the spectral range from below 400 to over 1100 nm.The different types makin...
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This family of N-type silicon p-i-n photodiodes C30807 is designed for use in a wide variety of broad band low light level applications covering the spectral range from below 400 to over 1100 nm.The different types makin...
Vendor:Other Category:Other
The C3077-70/-71 incorporates a next generation 2/3-inch CCD into a new compact B/W camera. Features of this model include high resolution, sensitivity, and S/N ratio. An electronic shutter function enables monitoring of...
Vendor:Other Category:Other
The C3077-70/-71 incorporates a next generation 2/3-inch CCD into a new compact B/W camera. Features of this model include high resolution, sensitivity, and S/N ratio. An electronic shutter function enables monitoring of...
Vendor:Other Category:Other
PerkinElmer's C30741 series of N-type Si PIN photodiodes provide fast response and high quantum efficiency in the spectral range of 400 to 1100 nm. The wavelength of maximal sensitivity is @ 800 nm. These epitaxial=struc...
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PerkinElmer's C30741 series of N-type Si PIN photodiodes provide fast response and high quantum efficiency in the spectral range of 400 to 1100 nm. The wavelength of maximal sensitivity is @ 800 nm. These epitaxial=struc...
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NEW - The short wavelength enhanced silicon avalanche photodiode (APD) by PerkinElmer (Model C30739ECERH) is designed for low light level applications covering the spectral range from less than 400 nm to greater than 700...
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The C30737 type avalanche photodiode provides high responsivity between 500 nm and 1000 nm, as well as extremely fast rise times at all wavelengths with a frequency response up to 1.0 GHz. The active area diameters of th...
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The C30723G is a large area InGaAs Pin photodiode providing a high responsivity from 900 nm to 1700 nm. Features: TO-8 package High responsivity High shunt resistance, low dark current Low capacitance for fast response t...
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The C30665G is a large area InGaAs Pin photodiode providing a high responsivity from 900 nm to 1700 nm. Features: TO-5 package High responsivity High shunt resistance, low dark current Low capacitance for fast response t...
Vendor:Other Category:Other
The PerkinElmer family of large-area InGaAs PIN photodiodes provide high responsivity from 800 nm to 1700 nm for applications including optical power meters, fiber optic test equipment, near-IR spectoscopy and instrument...
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Fast response, high quantum efficiency and low noise in the spectral range between 1100 nm and 1700 nm. C30662EH are optimized for use at a wavelength of 1540 nm and suitable for use in eye-safe laser range finding syste...
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Ceramic package version of the C30662EH. Fast response and high quantum efficiency in the spectral range between 1100 nm and 1700 nm. They are optimized for use at a wavelength of 1540 nm and suitable for use in eye-safe...
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Ceramic package version of the C30662E. Fast response and high quantum efficiency in the spectral range betwen 1100 nm and 1650 nm. Optimized for use at a wavelength of 1540 nm, available for use in eye-safe laser range ...
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Fast response and high quantum efficiency in the spectral range betwen 1100 nm and 1650 nm. Optimized for use at a wavelength of 1540 nm, available for use in eye-safe laser range finding systems. C30662E Features: Fast ...
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PerkinElmer C30659 Series includes a Silicon or InGaAs Avalanche Photodiode with a hybrid preamplifier. It is supplied in a single modified 12-lead TO-8 package.The avalanche photodiodes used in these devices are the C30...
Vendor:Other Category:Other
Si and InGaAs APD Modules - High Bandwidth - 50 MHz to 200 MHz PerkinElmer's C30659 Series includes a Silicon or InGaAs Avalanche Photodiode with a hybrid preamplifier. C30659 is supplied in a single modified 12-lead TO-...
Vendor:Other Category:Other
Fast response, high quantum efficiency and low noise in the spectral range between 1100 nm and 1700 nm. C30645EH are optimized for use at a wavelength of 1540 nm and suitable for use in eye-safe laser range finding syste...
Vendor:Other Category:Other
Ceramic package version of the C30645EH. Fast response and high quantum efficiency in the spectral range between 1100 nm and 1700 nm. They are optimized for use at a wavelength of 1540 nm and suitable for use in eye-safe...
Vendor:Other Category:Other
Ceramic package version of the C30645E. Fast response and high quantum efficiency in the spectral range between 1100 nm and 1700 nm. Optimized for use in fiber-optic communication systems, OTDRs and range finders with 13...
Vendor:Other Category:Other
Fast response and high quantum efficiency in the spectral range between 1100 nm and 1700 nm. Optimized for use in fiber-optic communication systems, OTDRs and range finders with 1300 to 1500 nm wavelength ranges. C30645E...
Vendor:Other Category:Other
Ceramic package version of the C30644E. Fast response and high quantum efficiency in the spectral range between 1100 nm and 1700 nm. Optimized for use in fiber-optic communication systems, OTDRs and range finders with 13...
Vendor:Other Category:Other
Fast response and high quantum efficiency in the spectral range between 1100 nm and 1700 nm. Optimized for use in fiber-optic communication systems, OTDRs and range finders with 1300 to 1500 nm wavelength ranges. C30644E...
Vendor:Other Category:Other
The C30642G is a large area InGaAs Pin photodiode providing a high responsivity from 900 nm to 1700 nm. C30642G Features: TO-5 package High responsivity High shunt resistance, low dark current Low capacitance for fast re...
Vendor:Other Category:Other
The PerkinElmer family of large-area InGaAs PIN photodiodes provide high responsivity from 800 nm to 1700 nm for applications including optical power meters, fiber optic test equipment, near-IR spectoscopy and instrument...
Vendor:Other Category:Other
The C30641G is a large area InGaAs Pin photodiode providing a high responsivity from 900 nm to 1700 nm. C30641G Features: TO-18 package High responsivity High shunt resistance, low dark current Low capacitance for fast r...
Vendor:Other Category:Other
The PerkinElmer family of large-area InGaAs PIN photodiodes provide high responsivity from 800 nm to 1700 nm for applications including optical power meters, fiber optic test equipment, near-IR spectoscopy and instrument...
Vendor:Other Category:Other
High-speed InGaAs PIN photodiode C30637ECERH with useful diameter of 75 m. Standard package: Rectangular Ceramic Operating Voltage (V): 5 Download the Datasheet here High Speed InGasAs PIN Photodiodes
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High-speed InGaAs PIN photodiode C30637ECER with 75 microns diameter of active area Standard package: Ceramic
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The C30619G is a large area InGaAs Pin photodiode providing a high responsivity from 900 nm to 1700 nm. Features: TO-18 package High responsivity High shunt resistance, low dark current Low capacitance for fast response ...
Vendor:Other Category:Other
The PerkinElmer family of large-area InGaAs PIN photodiodes C30619 provide high responsivity from 800 nm to 1700 nm for applications including optical power meters, fiber optic test equipment, near-IR spectoscopy and ins...
Vendor:Other Category:Other
High-speed InGaAs PIN photodiode C30618GH with useful diameter of 350 m. Standard package: TO-18 Operating Voltage (V): 5 Window type: Flat Glass Download the Datasheet here High Speed InGasAs PIN Photodiodes
Vendor:Other Category:Other
High-speed InGaAs PIN photodiode C30618G with 350 microns diameter of active area. Standard package: TO Window
Vendor:Other Category:Other
High-speed InGaAs PIN photodiode C30618ECERH with useful diameter of 350 m. Standard package: Rectangular Ceramic Operating Voltage (V): 5 (typical)Window type: Flat Glass Download the Datasheet here High Speed InGasAs ...
Vendor:Other Category:Other
High-speed InGaAs PIN photodiode C30618ECER with 350 microns diameter of active area. Standard package: Ceramic
Vendor:Other Category:Other
High-speed InGaAs PIN photodiode C30618BFCH with useful diameter of 100 m. Standard package: T0-18 Ball glass lens with FC-receptacle Operating Voltage (V): 5 (typical)Window type: Ball glass lens Download the Datasheet ...
Vendor:Other Category:Other
High-speed InGaAs PIN photodiode C30617ECERH with useful diameter of 100 m. Standard package: Rectangular Ceramic Operating Voltage (V): 5 (typical) Window type: Ball glass lens Download the Datasheet here High Speed In...
Vendor:Other Category:Other
High-speed InGaAs PIN photodiode C30617ECER with 100 microns diameter of active area. Standard package: Ceramic
Vendor:Other Category:Other
High-speed InGaAs PIN photodiode C30617BSCH with useful diameter of 100 m. Standard package: T0-18 ball glass lens Operating Voltage (V): 5 (typical) Window type: Ball glass lens Download the Datasheet here High Speed I...
Vendor:Other Category:Other
High-speed InGaAs PIN photodiode C30617BH with useful diameter of 100 m. Standard package: T0-18 Ball glass lens Operating Voltage (V): 5 (typical)Window type: Ball glass lens Download the Datasheet here High Speed InGa...
Vendor:Other Category:Other
High-speed InGaAs PIN photodiode C30617BFCH with useful diameter of 100 m. Standard package: T0-18 ball lens with FC receptacleOperating Voltage (V): 5 Window type: Ball glass lens Download the Datasheet here High Speed...
Vendor:Other Category:Other
High-speed InGaAs PIN photodiode C30617B with 100 microns diameter of active area. Standard package: Ball lens
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High-speed InGaAs PIN photodiode C30616ECERH with 50 m diameter of active area. Standard package: Rectangular Ceramic Operating Voltage (V): 5 (typical) Download the Datasheet here High Speed InGasAs PIN Photodiodes
Vendor:Other Category:Other
High-speed InGaAs PIN photodiode C30616ECER with 50 microns diameter of active area. Standard package: Ceramic
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Mfg:Vishay D/C:08+ Vendor:Other Category:Other
Compression load cells C2P1
Mfg:Vishay D/C:08+ Vendor:Other Category:Other
High temperature compression load cell C2G1-H
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Mfg:ST Pack:SMD D/C:05+ Vendor:Other Category:Other
The C2955 is an IC internal inspection system incorporating an infrared microscope and an infrared CCD camera. Use of a newly developed infrared CCD camera enables a high sensitivity approximately ten times that of conve...
Vendor:Other Category:Other
Streak camerasC2830 are high-speed light detectors which enable direct measurement of light phenomena with unsurpassed temporal resolution. They can simultaneously measure time, position (or wavelength) and light intens...
Vendor:Other Category:Other
The C2741-32A, -35A cameras are designed specifically for imaging at ultra-low light levels. Each camera consists of an image intensifier including a 1 stage MCP and CCD camera coupled with a relay lens.Single photon cou...
Vendor:Other Category:Other
The C2741-32A, -35A cameras are designed specifically for imaging at ultra-low light levels. Each camera consists of an image intensifier including a 1 stage MCP and CCD camera coupled with a relay lens.Single photon cou...
Vendor:Other Category:Other
The C2741-03 is a high-performance video camera with various functions that have been developed for image processing and measurement purposes. The camera has sensitivity to 1800 nm from a visible wavelength region. Compa...
Mfg:NEC Pack:TO-92 D/C:04+ Vendor:Other Category:Other
C2719 is a current-to-voltage conversion amplifier used to amplify weak photocurrent from a photodiode with very low noise. Three ranges of photocurrent detection sensitivity level (H, M, L) are selectable to match the i...
Pack:N/A D/C:08+ Vendor:Other Category:Other
Vendor:Other Category:Other
The W541E261 and W541C261 are high-performance 4-bit microcontroller (C) with an LCD driver and the flash EEPROM and mask ROM for the program memory. C261 contains a 4-bit ALU, two 8-bit timers, two dividers, a 32 * 4 LC...
Pack:TO247 D/C:03+ Vendor:Other Category:Other
Mfg:N/A Pack:NA/ D/C:09+ Vendor:Other Category:Other
Mfg:ANAREN Pack:N/A D/C:N/A Vendor:Other Category:Other
Mfg:FWI Pack:TO-220 D/C:2003 Vendor:Other Category:Other
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Mfg:SK Pack:TO3P-3 D/C:98+ Vendor:Other Category:Other
Anti-Cholecystokinin (26-33) (CCK-8) C2581 is produced in rabbit using as immunogen synthetic sulfated cholecystokinin (26-33) amide (sulfated CCK-8),conjugated to KLH.Anti-Cholecystokinin (26-33) (CCK-8) C2581 specifica...
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