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C30955EH

DescriptionGeneral purpose silicon avalanche photodiode made using a double-diffused reach-through structure. This photodiode C30955EH is designed such that it's long wave response (>900 nm) has been enhanced without introducing any undesirable properties. These APDs have quantum efficiency o...

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C30955EH: DescriptionGeneral purpose silicon avalanche photodiode made using a double-diffused reach-through structure. This photodiode C30955EH is designed such that it's long wave response (>900 nm) ha...

C30955EH Data Sheet

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Part Number:
C30955EH
Supply Ability:
5000

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Description

General purpose silicon avalanche photodiode made using a double-diffused "reach-through" structure. This photodiode C30955EH is designed such that it's long wave response (>900 nm) has been enhanced without introducing any undesirable properties. These APDs have quantum efficiency of up to 40% at 1060 nm. C30955EH Key applications include: Range-finding, LIDAR, and YAG laser detection. C30955EH Features: High quantum efficiency at 1060 nm Fast response time Wide operating temperature range Low capacitance Hermetically Sealed Packages RoHS-compliant Click here to view the Datasheet Long Wavelength Enhanced Silicon APD


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