C30822

Features:

•Broad Range of Photosensitive Surface Areas 0.2 mm² to 100 mm²
• Low Operating Voltage V_R = 45V
• Anti-Reflection Coated to Enhance Responsivity at 900 nm
• Hermetically-Sealed Packages
• Spectral Response Range 400 to 1100 nm


Specifications

DC Reverse Operating Voltage V_R  . . . . . . . . . . . . . . . . . 100 max. V
Photocurrent Density, jp at 22°C:
    Average value, continuous operation . . . . . . . . . . . . . 5 mA/mm²
    Peak value  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 mA/mm²
Forward Current, I_F:
    Average value, continuous operation . . . . . . . . . . . . . 10 max. mA
    Peak value . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 max. mA
Ambient Temperature:
    Storage, T_stg  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -60 to +100°C
    Operating, T_A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40 to +80°C
Soldering (for 5 seconds) . . . . . . . . . . . . . . . . . . . . . . . . 200°C


Description

This C30822 family of N-type silicon p-i-n photodiodes is designed for use in a wide variety of broad band low light level applications covering the spectral range from below 400 to over 1100 nm.

The different types making up this C30822 series provide a broad choice in photosensitive areas and in time response characteristics. Each of the types is antireflection coated to enhance responsivity at 900 nm.

These C30822 characteristics make the devices highly useful in HeNe and GaAs laser detection systems and in optical demodulation, data transmission, ranging, and high-speed switching applications.