C30904E

Features: SpecificationsDescriptionRCA development type C30904E is silicon avalanche photodiodes containing a light pipe which is an integral part of the package. These avalche photodiodes are made using a double-diffused reach through structure. This structure provides high responsivity between ...

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SeekIC No. : 004308766 Detail

C30904E: Features: SpecificationsDescriptionRCA development type C30904E is silicon avalanche photodiodes containing a light pipe which is an integral part of the package. These avalche photodiodes are made ...

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Part Number:
C30904E
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/27

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Product Details

Description



Features:






Specifications






Description

RCA development type C30904E is silicon avalanche photodiodes containing a light pipe which is an integral part of the package. These avalche photodiodes are made using a double-diffused "reach through"structure. This structure provides high responsivity between 600 and 1100 nanometers as well as fast rise and fall times at all wavelengths. C30904E is a general purpose device and is hermetically sealed in a modified 3 lead TO-8 package. C30904E has many unique features: the first one is simplified coupling to fiber optics up to 1.25 mm Dia.The second one is light pipe diameters of 0.25 mm. The third one is spectral response range(10% points0 is 400 nm to 100 nm.The forth one is fast time response. The fifth one is wide operating temperature range. The last one is hermetically-sealed TO-8 package.

There are some maximum ratings about C30904E. Reverse bias dark current is 100 max uA .Photocurrent density, JP,at 22: Average value,continous operation is 5 mA max. Peak value (for 1 second duration, non-repetitive) is 50 mA max. Maximum total power dissipation at 22 is 0.1 W max. Ambient temperature: Storage temperature(Tstg) is -60 to 100.Operating temperature (Ta) is -40 to 70.Soldering temperature (for 5 seconds) is 200.Otherwise, there are also some electrical charactersitics about it.Breakdown voltage(VBR) is 300 V min, 375 V typ and 475 V max.Gain is 120 typ.Responsivity is 60 A/W min, 69 A/W typ at 830 nm. Quantum efficiency is 85% typ at 830 nm. Total dark current(ID) is 50 nA typ and 200 nA max.Series resistance is 15 ohm max.

Well, C30904E is a simple introduction to this type of product, if you want to know more about C30904E, please pay more attention to our web. Thanks for your attention!






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