C30619

Features:

• 0.5,1.0, 2.0, and 3.0 mm diameters
• High responsivity from 850 nm to 1550 nm
• High shunt resistance, low dark current
• TE-cooled package options
• Low capacitance for fast response times


Application

•Power meters
• Fiber identifiers
• Laser burn-in racks
• Near infrared instrumentation
• F.T.I.R. spectroscopy


Specifications

Parameter	C30619			C30641			Units
	Min	Typ	Max	Min	Typ	Max
Active Diameter		0.5			1.0		mm
Responsivity At 850 nm	0.10	0.20		0.10	0.20		A/W
At 1300 nm	0.80	0.90		0.80	0.90		A/W
At 1550 nm	0.85	0.95		0.85	0.95		A/W
Shunt Resistance (VR = 10 mV) 1	10	250		5	50		M
Dark Current		1	20		5	50	nA
Spectral Noise Current (10 kHz, 1.0 Hz)		0.02	0.10		0.04	0.15	pA/Hz
Capacitance At VR = 0V		20	25		100	125	pF
At VR = VOP		8	10		40	50	pF
Bandwidth (-3 dB, RL = 50)		350			75		MHz
Linearity2		> +13			> +13		dBm
Available package types		D2, D14			D2, D14		-

Description

The PerkinElmer family of large-area InGaAs PIN photodiodes C30619 provide high responsivity from 800 nm to 1700 nm for applications including optical power meters, fiber optic test equipment, near-IR spectoscopy and instrumentation. C30619 are planar passivated and feature low capacitance for extended bandwidth, and high shunt resistance for maximum sensitivity. Typical devices feature <1% non-linearity to optical powers >+13 dBm (20 mW), and uniformity within ±2% across the detector active area. Typical responsivity of 0.2 A/W at 850 nm for our large-area InGaAs devices allows use of a single detector in fiber optic test instrumentation designed to operate at 850, 1300, and 1550 nm.

C30619 are available with active areas from 0.5 mm to 3.0 mm in TO-type packages or on thermoelectric coolers for increased sensitivity (see below). Photodiodes C30619 can also be mounted on customized ceramic sub-mounts to suit specific application requirements. PerkinElmer Optoelectronics Canada is qualified to ISO-9001 and operates to MIL-Q- 9858A and AQAP-1 quality standards. C30619 undergo extended life-test and periodic process qualification programs to assure high reliability. In addition, all production devices are sourced from a qualified wafer, screened with a 16 hour, 200°C burn-in at -10V bias (C30619 and C30641) or -5V (C30642 and C30665), and tested to meet responsivity, spectral noise, capacitance, shunt resistance and dark current specifications.