DescriptionQuadrant silicon photodiodes C30927E-03 made using a double-diffused ''reach-through'' structure. The quadrant structure has a common avalanche junction, with separation of the quadrants achieved by segmentation of the light-entry p + surface opposite the junction. Features: High Quantu...
C30927E-03: DescriptionQuadrant silicon photodiodes C30927E-03 made using a double-diffused ''reach-through'' structure. The quadrant structure has a common avalanche junction, with separation of the quadrants ...
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DescriptionThe C30902S-DTC APD comes with a 2-stage thermo-electric cooler. Cooling the APD reduce...