C30659-900-1060-1550nm

 `System bandwidth 50 MHz and 200 MHz
 `Ultra low noise equivalent power (NEP) 
 `Spectral response range:
    Silicon APD: 400 to 1100nm
    InGaAs APD: 1100 to 1700nm
 `Power consumption (150 mW typ.)
 `+/-5 Volts amplifier operating voltages
 `50 AC Load capability
 `Hermetically sealed TO-8 packages
 `High reliability
 `Fast overload recovery
 `Pin compatible with the C30950 series
 `Light entry angle 130°

PerkinElmer C30659 Series includes a Silicon or InGaAs Avalanche Photodiode with a hybrid preamplifier. It is supplied in a single modified 12-lead TO-8 package.

The avalanche photodiodes used in these devices are the C30817E, C30902E, C30954E, C30956E,C30645E and C30662E that provide very good response between 830 and 1550 nanometers and very fast rise and fall times at all wavelengths. The preamplifier section uses a very low noise GaAs FET front end designed to operate at higher transimpedance than the regular C30950 series.

The C30659 is pin to pin compatible with the C30950 series. The output of the C30659 is negative. An emitter follower is used as an output buffer stage. To obtain the wideband characteristics, the output of these devices should be AC (capacitively) coupled to a 50 Ohm termination. The module must not be DC coupled to loads of less than 2,000 Ohms.

For field use, it is recommended that a temperature compensated HV supply be employed to maintain responsivity constant over temperature.