WFP640, WFP640/, WFP70N06 Selling Leads, Datasheet
MFG:WISDOM Package Cooled:TO220 D/C:10000
WFP640, WFP640/, WFP70N06 Datasheet download
Part Number: WFP640
MFG: WISDOM
Package Cooled: TO220
D/C: 10000
WFP640, WFP640/, WFP70N06
- Table of contents:
Info of WFP640
Info of WFP640/
Info of WFP70N06
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About WFP50N06
PDF/DataSheet Download
Datasheet: WFP50N06
File Size: 789680 KB
Manufacturer:
Download : Click here to Download
About WFP50N06
PDF/DataSheet Download
Datasheet: WFP50N06
File Size: 789680 KB
Manufacturer:
Download : Click here to Download
About WFP50N06
PDF/DataSheet Download
Datasheet: WFP50N06
File Size: 789680 KB
Manufacturer:
Download : Click here to Download
WFP640 General Description
This Power MOSFET is produced using Wisdom's advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supply, DC-AC converters for uninterruped power supply, motor control.
WFP640 Maximum Ratings
| Symbol | Characteristic | Value | Units |
| VDSS | Drain-to-Source Voltage | 200 | V |
| ID | Continuous Drain Current (TC=25°C) | 18 | A |
| Continuous Drain Current (TC=100°C) | 11.4 | A | |
| IDM | Drain Current-Pulsed (Note 1) | 72 | A |
| VGS | Gate-to-Source Voltage | ±25 | V |
| EAS | Single Pulsed Avalanche Energy (Note 2) | 250 | mJ |
| EAR | Repetitive Avalanche Energy (Note 1) | 13.9 | mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) | 5.5 | V/ns |
| PD | Total Power Dissipation(@TC = 25 °C) | 139 | W |
| Derating Factor above 25 °C | 1.11 | W/ | |
| TJ , TSTG | Operating Junction and Storage Temperature Range |
- 55 ~ 150 | |
| TL | Maximum Lead Temp. for Soldering Purposes, 1/8 from case for 5-seconds |
300 |
WFP640 Features
RDS(on) (Max 0.18 )@VGS=10V
Gate Charge (Typical 45nC)
Improved dv/dt Capability, High Ruggedness
100% Avalanche Tested
Maximum Junction Temperature Range (150°C)
Gate Charge (Typical 45nC)
Improved dv/dt Capability, High Ruggedness
100% Avalanche Tested
Maximum Junction Temperature Range (150°C)
WFP70N06 General Description
This Power MOSFET is produced using Wisdom's advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
WFP70N06 Maximum Ratings
| Symbol | Parameter | Value | Units |
| VDSS | Drain to Source Voltage | 60 | V |
| ID | Continuous Drain Current(@TC = 25) | 70 | A |
| Continuous Drain Current(@TC = 100) | 48 | A | |
| IDM | Drain Current Pulsed (Note 1) | 280 | A |
| VGS | Gate to Source Voltage | ±20 | V |
| EAS | Single Pulsed Avalanche Energy (Note 2) | 756 | mJ |
| EAR | Repetitive Avalanche Energy (Note 1) | 16.2 | mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) | 7.0 | V/ns |
| PD | Total Power Dissipation(@TC = 25 ) | 162 | W |
| Derating Factor above 25 | 1.08 | W/ | |
| TSTG, TJ | Operating Junction Temperature & Storage Temperature | - 55 ~ 175 | |
| TL | Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. |
300 |
WFP70N06 Features
RDS(on) (Max 0.015 )@VGS=10V
Gate Charge (Typical 50nC)
Improved dv/dt Capability, High Ruggedness
100% Avalanche Tested
Maximum Junction Temperature Range (175)
Gate Charge (Typical 50nC)
Improved dv/dt Capability, High Ruggedness
100% Avalanche Tested
Maximum Junction Temperature Range (175)
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