Position: Home  > All Categories> Integrated Circuits (ICs) > WFP634

WFP634

Features: RDS(on) (Max 0.45 )@VGS=10V Gate Charge (Typical 29nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150)Specifications Symbol Parameter Value Units VDSS Drain to Source Voltage 250 V ID Continuous Drain Current(@...

product image

WFP634 Picture
See larger image
SeekIC No. : 004545672 Detail

WFP634: Features: RDS(on) (Max 0.45 )@VGS=10V Gate Charge (Typical 29nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150)Specifications Symbol...

WFP634 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
WFP634
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/12/22

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

RDS(on) (Max 0.45 )@VGS=10V
Gate Charge (Typical 29nC)
Improved dv/dt Capability, High Ruggedness
100% Avalanche Tested
Maximum Junction Temperature Range (150)


Specifications

Symbol Parameter Value Units
VDSS Drain to Source Voltage 250 V
ID Continuous Drain Current(@TC = 25) 8.1 A
Continuous Drain Current(@TC = 100) 5.1 A
IDM Drain Current Pulsed                  (Note 1) 32.4 A
VGS Gate to Source Voltage ±25 V
EAS Single Pulsed Avalanche Energy  (Note 2) 200 mJ
EAR Repetitive Avalanche Energy       (Note 1) 7.4 mJ
dv/dt Peak Diode Recovery dv/dt          (Note 3) 5.5 V/ns
PD Total Power Dissipation(@TC = 25 ) 74 W
Derating Factor above 25 0.59 W/
TSTG, TJ Operating Junction Temperature & Storage Temperature - 55 ~ 150
TL Maximum Lead Temperature for soldering purpose,
1/8 from Case for 5 seconds.		 300



Description

This Power MOSFET of the WFP634 is produced using Wisdom's advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices of the WFP634 are well suited for high efficiency switching DC/DC converters, switch mode power supply, DC-AC converters for uninterruped power supply, motor control.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Computers, Office - Components, Accessories
DS-4008HCI
LB104V03(A1)
Transformers
TM-09210
BV222-1-00992
Connectors, Interconnects
ASP-134488-01
WM4078-ND
Sensors, Transducers
GP2Y0D340K
PAN3509DH-TXWA
Memory Cards, Modules
WT32
VTL5C7
Kits
IT243
UVSC-110-4E1
View more