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WFP640

Features: RDS(on) (Max 0.18 )@VGS=10V Gate Charge (Typical 45nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150°C)Specifications Symbol Characteristic Value Units VDSS Drain-to-Source Voltage 200 V ID Continuous Drain Cu...

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SeekIC No. : 004545673 Detail

WFP640: Features: RDS(on) (Max 0.18 )@VGS=10V Gate Charge (Typical 45nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150°C)Specifications Symb...

WFP640 Data Sheet

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Part Number:
WFP640
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/22

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Product Details

Description



Features:

RDS(on) (Max 0.18 )@VGS=10V
Gate Charge (Typical 45nC)
Improved dv/dt Capability, High Ruggedness
100% Avalanche Tested
Maximum Junction Temperature Range (150°C)


Specifications

Symbol Characteristic Value Units
VDSS Drain-to-Source Voltage 200 V
ID Continuous Drain Current (TC=25°C) 18 A
Continuous Drain Current (TC=100°C) 11.4 A
IDM Drain Current-Pulsed (Note 1) 72 A
VGS Gate-to-Source Voltage ±25 V
EAS Single Pulsed Avalanche Energy (Note 2) 250 mJ
EAR Repetitive Avalanche Energy (Note 1) 13.9 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns
PD Total Power Dissipation(@TC = 25 °C) 139 W
Derating Factor above 25 °C 1.11
W/
TJ , TSTG Operating Junction and
Storage Temperature Range		 - 55 ~ 150
TL Maximum Lead Temp. for Soldering
Purposes, 1/8 from case for 5-seconds		 300



Description

This Power MOSFET of the WFP640 is produced using Wisdom's advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices of the WFP640 are well suited for high efficiency switching DC/DC converters, switch mode power supply, DC-AC converters for uninterruped power supply, motor control.




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